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Graphite matrix flawless TaC coating and manufacturing method thereof

A crack-free and coating technology, which is applied in the manufacture of crack-free TaC coatings on graphite substrates and the preparation of high-performance coatings, can solve problems such as low air resistance, cracks, and cracks in the coating. Achieve the effect of improving the ability of anti-corrosion and anti-diffusion, good thermal shock resistance and simple process technology

Inactive Publication Date: 2012-05-30
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] But as far as the current TaC preparation technology is concerned, it is mainly the preparation of a single TaC coating. Its disadvantages are: when the coating is thin, the air resistance is not high, and the desired purpose cannot be achieved; and when the thickness of the coating exceeds When a certain value (such as 20μm), the coating is prone to cracks, thus losing the protection of graphite
The main reason is that the thermal expansion coefficient of TaC coating is large, which is more than twice that of high-purity graphite for semiconductors. If TaC coating is directly applied on high-purity graphite, it is easy to crack and be scrapped.

Method used

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  • Graphite matrix flawless TaC coating and manufacturing method thereof
  • Graphite matrix flawless TaC coating and manufacturing method thereof
  • Graphite matrix flawless TaC coating and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] See the process flow figure 1 , take the density higher than 1.80g / cm 3 High-purity graphite is used as the base material, cut into Φ50mm×7mm samples, successively use 200 # 、400 # 、1000 # Grind and polish with alumina water-resistant sandpaper, wash with ultrasonic waves for 30-60 minutes, take it out and dry it in an oven at 130°C for 2 hours, weigh it, put it into a chemical vapor deposition furnace; vacuumize to below 50Pa, and heat to 1300°C; Simultaneous access to C 3 h 6 , TaCl 5 , Trichloromethylsilane (CH 3 SiCl 3 ), hydrogen and diluent Ar gas, where TaCl 5 , Trichloromethylsilane (CH 3 SiCl 3 ) is brought in by Ar gas, the furnace pressure is maintained at 2000Pa, and the SiC-TaC co-deposition coating is deposited. After 10 hours, the thickness of the SiC-TaC co-deposition coating is 23 μm (the structure is as follows figure 2 ); stop feeding trichloromethylsilane, pass into C 3 h6 , TaCl 5 , hydrogen and diluent Ar gas, keep the furnace pressur...

Embodiment 2

[0027] See the process flow figure 1 , take the density higher than 1.80g / cm 3 High-purity graphite is used as the base material, cut into Φ150mm×7mm samples, successively use 200 # 、400 # 、1000 # Grind and polish with alumina water-resistant sandpaper, wash with ultrasonic waves for 30-60 minutes, take it out and dry it in an oven at 130°C for 2 hours, weigh it, put it into a chemical vapor deposition furnace; vacuumize to below 50Pa, and heat to 970°C; ① Simultaneous access to C 3 h 6 , TaCl 5 , Trichloromethylsilane (CH 3 SiCl 3 ), hydrogen and diluent Ar gas, where TaCl 5 , Trichloromethylsilane (CH 3 SiCl 3 ) is brought in by Ar gas, the furnace pressure is kept at 2000-3000Pa, and the SiC-TaC co-deposited coating is deposited for 10 hours, and the thickness of the SiC-TaC co-deposited coating is 50 μm; 3 h 6 , TaCl 5 , hydrogen and dilute Ar gas, the furnace pressure is kept below 3000Pa, and the TaC coating is deposited. After 2 hours of deposition, the thi...

Embodiment 3

[0029] see figure 1 , take the density higher than 1.80g / cm 3 High-purity graphite is used as the base material, cut into Φ150mm×7mm samples, successively use 200 # 、400 # 、1000 # Grind and polish with alumina water-resistant sandpaper, wash with ultrasonic waves for 30-60 minutes, take it out and dry it in an oven at 130°C for 2 hours, weigh it, and put it into a chemical vapor deposition furnace; vacuumize it to below 50Pa, and heat it to 900°C. (1) Simultaneous access to C 3 h 6 , TaCl 5 , Trichloromethylsilane (CH 3 SiCl 3 ), hydrogen and diluent Ar gas, where TaCl 5 , Trichloromethylsilane (CH 3 SiCl 3 ) is brought in by Ar gas, the furnace pressure is maintained at 2000-3000Pa, and the SiC-TaC co-deposition coating is deposited for 20 hours, and the thickness of the SiC-TaC co-deposition coating is 30 μm. (2) consists of the following steps, ① stop feeding trichloromethylsilane, feed C 3 h 6 , TaCl 5 , hydrogen and diluent Ar gas, the furnace pressure is ke...

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Abstract

The invention discloses a graphite matrix flawless TaC coating and a manufacturing method thereof. A tie coat is deposited on a graphite matrix. A TaC main coating is deposited on the outer layer of the tie coat. The tie coat is composed of a SiC-TaC codeposition coating or compounded by two transition layers of the SiC-TaC codeposition coating and a SiC-TaC laminated coating. When the tie coat is compounded by two transition layers of the SiC-TaC codeposition coating and the SiC-TaC laminated coating, the SiC-TaC codeposition coating serves as a first transition layer, and the SiC-TaC laminated coating serves as a second transition layer; and then the deposition of the tie coat is ended; or the SiC-TaC codeposition coating and the SiC-TaC laminated coating are alternatively deposited many times. Good TaC coating which has small heat stress, no macroscopic cracking, corrosion-resistance, and good thermal stability is deposited out of the surface of the graphite material. The method issuitable for preparing graphite substrate, graphite crucible, graphite windpipe, graphite guide shell coating in the crystal and semiconductor production, protecting and cleaning coating such as antisepsis, anti-pollution, anti-infiltration, anti-oxidation of graphite parts in other various hot environments.

Description

technical field [0001] The invention relates to a TaC coating without cracks on graphite substrates. The invention also relates to a method for manufacturing the TaC coating without cracks on graphite substrates. It belongs to the field of production and preparation of crystals and semiconductor materials, and is mainly used for carbon materials such as graphite for crystals and semiconductor production. or the preparation of high-performance coatings for components. technical background [0002] Graphite materials for crystal and semiconductor production refer to high-temperature and high-purity graphite materials or components such as bases, crucibles, heating elements, guide tubes, operators, tooling graphite, etc. for crystals and semiconductor production. Its purity and chemical stability and other properties It is directly related to the purity, performance and quality of semiconductor materials, so it is the key material for crystal and semiconductor production. Due ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/52
Inventor 李国栋熊翔张红波黄伯云陈招科孙威王雅雷
Owner CENT SOUTH UNIV
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