Dishing phenomenon detection unit in chemical mechanical polishing, manufacturing method and detection method

Abstract

Disclosed are a detecting unit for dishing in chemical-mechanical polishing, a detecting method thereof, and a manufacturing method of the detecting unit. The manufacturing method comprises steps of growing a detecting layer on a pattern substrate after chemical-mechanical polishing, growing a covering on the detecting layer surface, processing the covering surface through chemical-mechanical polishing until removing the covering corresponding to the pattern edges of the pattern substrate surface, and finally forming the detecting unit on the pattern substrate surface by utilizing elective etching. The invention further provides a detecting method for dishing in chemical-mechanical polishing. The manufacturing method and the detecting method are adaptable to not only detecting patterned substrates made of conductive materials but patterned substrates made of insulation materials, which have universality.

Description

technical field [0001] The invention relates to a semiconductor device technology, in particular to a detection unit, a manufacturing method and a detection method for the sinking phenomenon in chemical mechanical polishing. Background technique [0002] Chemical Mechanical Polish (CMP) process is one of the most common processes in semiconductor integrated circuit technology, and is an indispensable film planarization technology in advanced semiconductor technology. CMP is widely used in various stages of integrated circuit technology, such as wafer polishing, shallow trench isolation (Shallow Trench Isolation: STI), metal interconnection, and the like. Various materials including monocrystalline silicon, polycrystalline silicon, silicon dioxide, silicon nitride, hafnium oxide, metal, metal silicide, etc. can be polished by CMP. [0003] At this stage, the sinking problem generated in the CMP process is one of the problems that plague the process engineers. The so-called ...

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Problems solved by technology

However, the method of detecting resistance determines that the detection unit must be made of conductive materials, so this solution can only be used to detect the depression of the pattern formed by metal or other conductive materials, and is not suitable for insulating materials such as silicon dioxide and silicon nitride. Sag detection, therefore not universal

[0006] In the prior art, the detection unit and detection method for the sinking phenomenon in the CMP process cannot be applied to both conductive patterns and insulating patterns, and are not universal

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