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Method for preparing graphical substrate of GaN-based LED by silicon 001 crystal face

A graphics substrate and graphics technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high cost and poor quality, and achieve the effect of low cost, good quality and improved crystal quality

Inactive Publication Date: 2009-07-01
深圳市方大国科光电技术有限公司
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Problems solved by technology

[0011] The technical problem to be solved by the present invention is to provide a low defect density, simple process, low cost and good quality silicon ( 001) Method for preparing a graphic substrate for GaN-based LEDs

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  • Method for preparing graphical substrate of GaN-based LED by silicon 001 crystal face
  • Method for preparing graphical substrate of GaN-based LED by silicon 001 crystal face

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Embodiment Construction

[0027] The method for preparing the pattern substrate of GaN-based LED by using silicon (001) of the present invention is used to prepare a silicon wafer substrate with Si(111) surface, and then the GaN-based LED structure is epitaxially grown on the silicon wafer substrate by the MOCVD method The LED structure includes a buffer layer 12, a u-GaN layer 13, an n-GaN layer 14, a light-emitting layer 15, and a p-GaN layer 16, which are sequentially grown on the substrate 11, such as figure 1 Shown.

[0028] This method first prepares a mask with patterned openings on Si (001): firstly, SiO is deposited on the silicon (001) by PECVD (plasma enhanced chemical vapor deposition). 2 For the mask layer, the evaporation temperature is 100-400°C and the thickness is 30-500nm. In this embodiment, the evaporation temperature is 200°C, the thickness is 70nm, and the evaporation time is 4 minutes; then, the photolithography technique is used to peel off the part SiO 2 Mask, in SiO 2 The pattern...

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Abstract

The invention relates to a method of utilizing silicon (001) to prepare graph substrates of GaN base LED, which comprises the following steps: firstly, preparing mask films with graph openings on the silicon (001), secondly, placing the silicon (001) got from the step 1 in corrosive solution with anisotropic property etching characteristics, preparing silicon chips with graphs, wherein the silicon chips are provided with silicon (111) crystal faces, thirdly, stripping off the mask films on the silicon chips from the step 2, and getting the graph substrates of the GaN base LED, eroding a Si (111) surface with a certain slope angle on the silicon (001) substrate, thereby doing the epitaxial growth of the GaN base LED on the silicon (111) surface, and the technique is simple. An inversed gold tower shaped substrate which is prepared can effectively release stressing in an epitaxy layer, thereby improving the crystal quality of the epitaxy layer. The method has the advantages of low shortcoming density, simple technique, low production cost, excellent quality and the like.

Description

Technical field [0001] The present invention relates to a method for preparing a substrate of an LED (light emitting diode) chip, and more specifically, to a method for preparing a pattern substrate of a GaN-based LED by using silicon (001). Background technique [0002] Si-based GaN has broad product application prospects, including optoelectronic devices, microwave, millimeter wave high-power electronic devices, optical and mechanical sensors, high-temperature radiation-resistant electronic devices, and high-voltage rectifiers. At present, the key factor restricting the development of nitride materials and devices is the lack of matching substrates that can grow device-level epitaxial layers. As a result, the cost of mass production increases and the commercialization of GaN-based technologies is hindered. Since the current commercial GaN homogenous substrates are extremely expensive, people can only work hard to find a heteroepitaxial substrate with a relatively matching latti...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/308
Inventor 谢建春
Owner 深圳市方大国科光电技术有限公司
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