Back contact type solar cell and manufacturing process thereof

A solar cell, back-contact technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of difficulty in large-scale industrialization and increase in process costs, and achieve the effect of reducing production costs and costs.

Inactive Publication Date: 2009-07-08
JINGRI SOLAR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing back-contact solar cells are generally manufactured by complex processes such as high-temperature diffusion, photolithography, and laser ablation, which greatly increases the process cost and is difficult to be suitable for large-scale industrialization.

Method used

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  • Back contact type solar cell and manufacturing process thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Using n-type (100) single crystal silicon with a sheet resistance of 100Ω / □ and a thickness of 180μm as the substrate material, the steps of cleaning, etching to remove the damaged layer, texturing and silicon nitride anti-reflection layer deposition are carried out by conventional processes. Two kinds of nickel slurries doped with 5% Al and 5% Sb were prepared respectively by ball milling technique. The two kinds of nickel pastes were printed on the back of the single crystal silicon substrate by two screen printing processes, dried and then sintered at a high temperature of 700°C. The patterns and printing positions of the two groups of doped nickel electrodes can just form interdigitated electrode pairs on the back of the silicon wafer. The fingers of the interdigitated electrodes have a width of 1 mm and a pitch of 0.3 mm, which are evenly distributed across the back of the silicon wafer. During high-temperature sintering of the electrode, Al in the Al-doped Ni pas...

Embodiment 2

[0021] Using n-type (100) single crystal silicon with a sheet resistance of 200 Ω / □ and a thickness of 180 μm as the substrate material, the damaged layer was removed, etched and textured, and cleaned using conventional processes. A 1% Al-doped Ni paste was prepared, and the Al-doped Ni paste was printed on the back of the silicon substrate by a screen printing process and dried. Prepare 1% Sb-doped nickel paste, print Sb-doped Ni paste on the back of silicon substrate by screen printing process, dry and sinter at 600°C to form interdigitated electrode pairs. The patterns and positions of the two metal electrodes are just enough to form interdigitated electrode pairs on the back of the silicon wafer. The interdigitated electrodes have a width of 1mm and a spacing of 0.3mm. Al in the Al-doped Ni slurry diffuses into the silicon in the slurry contact area, making this part of the silicon doped into p-type silicon and forming an ohmic contact with the metal electrode, while the S...

Embodiment 3

[0023] n-type polysilicon with a sheet resistance of 300Ω / □ and a thickness of 200μm is used as the substrate material. On the basis of conventional nickel slurry, 2% Al and 2% Sb doped Ni slurry were prepared respectively by ball milling mixing technology. After the polysilicon wafer has undergone damage layer removal, cleaning, texturing, and anti-reflection film deposition, two kinds of doped Ni pastes are printed on the back of the polysilicon substrate by a screen printing process and dried. The printed patterns and positions of the two metal pastes are just enough to form interdigitated electrode pairs on the back of the silicon wafer, followed by high-temperature sintering at 700°C to form interdigitated electrode pairs. The width of the interdigitated lines of the interdigitated electrodes is 2mm, and the pitch is 0.5mm. Al in the Al-doped Ni electrode diffuses into n-type silicon at high temperature, reverses to p-type, and forms an ohmic contact with the Al-doped Ni...

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Abstract

The invention discloses a back-contact solar battery and the fabrication method thereof. The back-contact solar battery comprises electrodes fabricated by silk screen printing technology, an n-type crystal Si substrate with a square resistance of 50 to 300 omega/square and a thickness of 100 to 300 mum, an anti-reflection layer and a passivation layer arranged on the front surface of the Si substrate, and interdigitated metal electrode pairs printed on the back surface, wherein the electrode pairs include Al/Ni electrode and Sb/Ni electrode; the Al/Ni electrode contains Al 0.1 to 10 wt% with a purity larger than 99.99% and particle size less than 10 mum; and the Sb/Ni electrode contains Sb 0.1 to 10 wt% with a purity larger than 99.99% and particle size less than 10 mum. The back-contact solar battery suits industrial production, and has lower cost and high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a solar cell and a manufacturing method thereof, in particular to a back-contact solar cell and a manufacturing method thereof, and belongs to the fields of renewable energy and semiconductor optoelectronics. Background technique [0002] The theoretical limit photoelectric conversion efficiency of solar photovoltaic cells based on silicon substrates is greater than 28%. Among silicon-based solar photovoltaic cells, monocrystalline silicon large solar cells have the highest photoelectric conversion efficiency and the most mature technology. In recent years, due to a series of new technology breakthroughs, the conversion efficiency of monocrystalline silicon solar cells has reached 16%, but there is still a lot of room for improvement from the theoretical value. [0003] The emitter of conventional crystalline silicon solar cells is made on the front side (light-receiving side) of the silicon wafer, and there is about 10% of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/18
CPCY02E10/52Y02E10/50Y02P70/50
Inventor 万青
Owner JINGRI SOLAR SCI & TECH
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