N type SOI lateral double-diffused metal-oxide semiconductor transistor

An oxide semiconductor and lateral double-diffusion technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of complex manufacturing process, reduce bonding strength, and unfavorable heat dissipation of devices, so as to avoid photolithography The effect of alignment problem, reduction of integral length, and reduction of process difficulty

Inactive Publication Date: 2009-07-22
SOUTHEAST UNIV
View PDF0 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it makes most of the insulating material layer have a large thickness, which is not conducive to the heat dissipation of the device, and als

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N type SOI lateral double-diffused metal-oxide semiconductor transistor
  • N type SOI lateral double-diffused metal-oxide semiconductor transistor
  • N type SOI lateral double-diffused metal-oxide semiconductor transistor

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0019] Reference figure 2 , An N-type silicon-on-insulator lateral double-diffusion metal oxide semiconductor transistor, comprising: a semiconductor substrate 9, a buried oxide layer 8 is provided on the semiconductor substrate 9, and an N-type doped oxide layer is provided on the buried oxide layer 8. The semiconductor region 7 is provided with a P-well 6 and an N-type drain region 10 on the N-type doped semiconductor region 7, and an N-type source region 11 and a P-type contact region 13 are provided on the P-well 6, and on the surface of the P-well 6 A gate oxide layer 3 is provided, and the gate oxide layer 3 extends from the P well 6 to the N-type doped semiconductor region 7, on the surface of the P-well 6 in the N-type source region 11, the P-type contact region 13 and the area outside the gate oxide layer 3 And the area outside the N-type drain region 10 on the surface of the N-type doped semiconductor region 7 is provided with a field oxide layer 1, and a polysilicon ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

A laterally double diffused metal oxide semiconductor transistor of an N-shaped silicon-on-insulator (SOI) comprises a semiconductor substrate. A buried oxide is arranged on the semiconductor substrate, an N-shaped doped semiconductor drift region is arranged on the buried oxide and a P-shaped well region is arranged above the N-shaped doped semiconductor drift region, and a field oxide, a metal layer, a gate oxide, a polysilicon gate and an oxide layer are arranged on the surface of the transistor. An N-shaped source region and a P-shaped contact region are arranged in a P-shaped well. The transistor is characterized in that the transistor also comprises at least a layer of floating oxide structure which is positioned in the N-shaped doped semiconductor drift region between a drain region and the buried oxide; moreover, a plurality of layers of floating oxide structure are allowed to further optimize the distribution of longitudinal electric fields in the drain region, thereby increasing the entire breakdown voltage of the transistor.

Description

technical field [0001] The present invention relates to the field of power semiconductor devices, and more particularly relates to a new structure of a silicon-on-insulator lateral double-diffused metal-oxide-semiconductor transistor (SOI LDMOS) suitable for high-voltage applications. Background technique [0002] Since the device made of silicon-on-insulator material can realize full dielectric isolation, its parasitic capacitance and leakage current are small, and the driving current is large, so it is very suitable for manufacturing power integrated devices and circuits. In order to make silicon-on-insulator devices work better, it is an important research topic to improve the breakdown voltage of silicon-on-insulator devices. As we all know, the withstand voltage of a silicon-on-insulator power device depends on the minimum of its lateral withstand voltage and vertical withstand voltage. The lateral withstand voltage of the device can be achieved by using bulk silicon ju...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/78H01L29/10H01L21/316H01L21/762
CPCH01L29/7824H01L29/42368H01L29/0653
Inventor 钱钦松高怀吴虹李海松孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap