N type SOI lateral double-diffused metal-oxide semiconductor transistor

An oxide semiconductor and lateral double-diffusion technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of complex manufacturing process, reduce bonding strength, and unfavorable heat dissipation of devices, so as to avoid photolithography The effect of alignment problem, reduction of integral length, and reduction of process difficulty

CN101488526AInactive Publication Date: 2009-07-22SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2009-07-22
Estimated Expiration
Not applicable · inactive patent

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Abstract

A laterally double diffused metal oxide semiconductor transistor of an N-shaped silicon-on-insulator (SOI) comprises a semiconductor substrate. A buried oxide is arranged on the semiconductor substrate, an N-shaped doped semiconductor drift region is arranged on the buried oxide and a P-shaped well region is arranged above the N-shaped doped semiconductor drift region, and a field oxide, a metal layer, a gate oxide, a polysilicon gate and an oxide layer are arranged on the surface of the transistor. An N-shaped source region and a P-shaped contact region are arranged in a P-shaped well. The transistor is characterized in that the transistor also comprises at least a layer of floating oxide structure which is positioned in the N-shaped doped semiconductor drift region between a drain region and the buried oxide; moreover, a plurality of layers of floating oxide structure are allowed to further optimize the distribution of longitudinal electric fields in the drain region, thereby increasing the entire breakdown voltage of the transistor.
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Description

technical field

[0001] The present invention relates to the field of power semiconductor devices, and more particularly relates to a new structure of a silicon-on-insulator lateral double-diffused metal-oxide-semiconductor transistor (SOI LDMOS) suitable for high-voltage applications. Background technique

[0002] Since the device made of silicon-on-insulator material can realize full dielectric isolation, its parasitic capacitance and leakage current are small, and the driving current is large, so it is very suitable for manufacturing power integrated devices and circuits. In order to make silicon-on-insulator devices work better, it is an important research topic to improve the breakdown voltage of silicon-on-insulator devices. As we all know, the withstand voltage of a silicon-on-insulator power device depends on the minimum of its lateral withstand voltage and vertical withstand voltage. The lateral withstand voltage of the device can be achieved by using bulk silicon ju...

Examples

Embodiment Construction

[0019] refer to figure 2 , an N-type silicon-on-insulator lateral double-diffused metal oxide semiconductor transistor, comprising: a semiconductor substrate 9, a buried oxide layer 8 is arranged on the semiconductor substrate 9, and an N-type doped layer is arranged on the buried oxide layer 8 Semiconductor region 7 is provided with P well 6 and N type drain region 10 on N type doped semiconductor region 7, is provided with N type source region 11 and P type contact region 13 on P well 6, on the surface of P well 6 A gate oxide layer 3 is provided and the gate oxide layer 3 extends from the P well 6 to the N-type doped semiconductor region 7, and the N-type source region 11 on the surface of the P well 6, the P-type contact region 13 and the area other than the gate oxide layer 3 A field oxide layer 1 is provided in the area other than the N-type drain region 10 on the surface of the N-type doped semiconductor region 7, and a polysilicon gate 4 is provided on the surface of ...