Lateral double-diffused metal-oxide-semiconductor transistor of silicon on N-type insulator

Abstract

The invention relates to a lateral double-diffused metal-oxide-semiconductor transistor of silicon on an N-type insulator, which comprises the following components: a substrate is provided with a buried oxide layer; the buried oxide layer is provided with an N-type doped semiconductor region; the N-type doped semiconductor region is provided with a P trap and an N-type drain region; the P trap is provided with an N-type source region and a P-type contact region; a gate oxide is mounted on the surface of the P trap; regions except for the N-type source region on the surface of the P trap, P-type contact region and gate oxide and regions except the N-type drain region on the surface of the N-type doped semiconductor region are provided with field oxides; the surface of the gate oxide is provided with polysilicon gate; the surfaces of the field oxide, the P-type contact region, the N-type source region, the polysilicon gate and the N-type drain region are provided with oxide layers; the N-type source region, the P-type contact region, the polysilicon gate and the N-type drain region are connected with metal layers; the upper surface of the N-type doped semiconductor region arranged between the P trap and the N-type drain region is provided with an upper groove region; the contact part of the N-type doped semiconductor region and the buried oxide layer is provided with a lower groove region. The structure of the invention can effectively improve the pressurization performance of devices and reduce the on resistance of devices.

Description

technical field [0001] The invention relates to a silicon-on-insulator lateral double-diffused metal oxide semiconductor transistor (SOI LDMOS) structure suitable for high-voltage applications, and belongs to the technical field of power semiconductor devices. Background technique [0002] Power semiconductor devices are the basic electronic components for energy control and conversion in power electronic systems. The continuous development of power electronics technology has opened up a wide range of application fields for semiconductor power devices, and the characteristics of semiconductor power devices such as on-resistance and breakdown voltage determine The basic performance of the power electronic system, such as efficiency and power consumption. Modern power electronic devices and related products represented by lateral double-diffused metal-oxide-semiconductor transistors are playing an increasingly important role in industries, energy, transportation, and other occ...

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Problems solved by technology

[0004] In related technologies, it is proposed that the doping concentration of the N-type doped semiconductor region can be reduced, which can not only reduce the peak value of the vertical electric field, improve the vertical withstand voltage value of the device, but also increase the lateral device withstand voltage value, but it will make The on-resistance of the device is greatly increased, which increases the power dissipation of the device

[0005] It is also proposed to bury a highly doped N-type floating layer in the P-type substrate to form two reverse voltage-resistant PN junctions in the vertical direction, thereby increasing the vertical withstand voltage value, but this structure It is to redistribute the high electric field of the drain region to the source region and the middle region of the device, so it is not conducive to the withstand voltage of the source region and the middle region

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