Lateral double-diffused metal-oxide-semiconductor transistor of silicon on N-type insulator
An oxide semiconductor and lateral double-diffusion technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of increased device on-resistance, increased device power consumption, unfavorable source region and middle region withstand voltage, etc., to reduce The effects of on-resistance, improvement of overall withstand voltage, and area reduction
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0027] Conventional high-voltage N-type silicon-on-insulator lateral double diffused metal oxide semiconductor transistor structure, such as figure 1 Shown. The present invention provides an N-type silicon-on-insulator lateral double diffused metal oxide semiconductor transistor that can effectively increase the withstand voltage of the device and reduce the on-resistance of the device.
[0028] Such as figure 2 As shown, the N-type silicon-on-insulator lateral double-diffused metal oxide semiconductor transistor includes: a semiconductor substrate 9, on which a buried oxide layer 8 is provided, and on the buried oxide layer 8 is provided with N-type doping In the semiconductor region 7, a P-well 6 and an N-type drain region 10 are provided on the N-type doped semiconductor region 7, and an N-type source region 11 and a P-type contact region 12 are provided on the P-well 6, and on the surface of the P-well 6 A gate oxide layer 3 is provided, and the gate oxide layer 3 extends fr...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap