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Polyvinylidene fluoride dielectric film material doped with zinc oxide and preparation method thereof

A technology of polyvinylidene fluoride and dielectric film, which is applied in the direction of fixed capacitor dielectric, fixed capacitor parts, plastic/resin/wax insulator, etc. It can solve the problem of low dielectric constant and difficult dielectric properties of single-component materials. It is impossible to improve the mechanical properties and energy storage density to achieve the effect of increasing the dielectric constant.

Inactive Publication Date: 2009-07-29
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] It is difficult for single-component materials to have excellent dielectric and mechanical properties at the same time
Polymers have the characteristics of processability and high mechanical strength, but the dielectric constant is generally low, and its energy storage density cannot be greatly improved.

Method used

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  • Polyvinylidene fluoride dielectric film material doped with zinc oxide and preparation method thereof
  • Polyvinylidene fluoride dielectric film material doped with zinc oxide and preparation method thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0031] A method for preparing a ZnO-doped PVDF dielectric film material by using a solution blending method includes the following preparation steps:

[0032] Step 1: Make a transparent solution

[0033] Add polyvinylidene fluoride (PVDF) with a particle size of 10μm to N,N-dimethylformamide (DMF) at a temperature of 25°C, and form a transparent solution after being fully dissolved;

[0034] Dosage: Add 80ml of N,N-dimethylformamide to 1g of polyvinylidene fluoride;

[0035] Step 2: Making the suspension

[0036] Add low-dimensional nanostructured rod-shaped ZnO with a diameter of 200 nm and a length of 3 μm to the transparent solution prepared in step 1 at a temperature of 25°C, and form a uniform suspension after ultrasonic vibration for 30 minutes;

[0037] Dosage: Add 0.25g of ZnO to 1g of polyvinylidene fluoride;

[0038] Step 3: Drying the dielectric film

[0039] The suspension obtained in step 2 is poured into a watch glass and placed in an oven, and dried at 80° C. for 8 ...

Embodiment 2

[0042] A method for preparing a ZnO-doped PVDF dielectric film material by using a solution blending method includes the following preparation steps:

[0043] Step 1: Make a transparent solution

[0044] Add polyvinylidene fluoride (PVDF) with a particle size of 15μm to N,N-dimethylformamide (DMF) at a temperature of 22°C, and form a transparent solution after being fully dissolved;

[0045] Dosage: Add 70ml of N,N-dimethylformamide to 1g of polyvinylidene fluoride;

[0046] Step 2: Making the suspension

[0047] Add low-dimensional nanostructured rod-shaped ZnO with a diameter of 100 nm and a length of 2 μm to the transparent solution prepared in step 1 at a temperature of 22°C, and form a uniform suspension after ultrasonic vibration for 25 minutes;

[0048] Dosage: 0.18g of ZnO powder is added to 1g of polyvinylidene fluoride;

[0049] Step 3: Drying the dielectric film

[0050] The suspension prepared in step 2 is poured into a watch glass and placed in an oven, and dried at 9...

Embodiment 3

[0053] A method for preparing a ZnO-doped PVDF composite dielectric film material by using a solution blending method includes the following preparation steps:

[0054] Step 1: Make a transparent solution

[0055] Add polyvinylidene fluoride (PVDF) with a particle size of 20μm to N,N-dimethylformamide (DMF) at a temperature of 25°C, and form a transparent solution after being fully dissolved;

[0056] Dosage: Add 60ml of N,N-dimethylformamide to 1g of polyvinylidene fluoride;

[0057] Step 2: Making the suspension

[0058] At a temperature of 25°C, add low-dimensional nanostructured rod-shaped ZnO with a diameter of 80nm and a length of 1μm to the transparent solution prepared in step 1, and ultrasonically vibrate for 20 minutes to form a uniform suspension;

[0059] Dosage: 0.1g of ZnO powder is added to 1g of polyvinylidene fluoride;

[0060] Step 3: Drying the dielectric film

[0061] The suspension prepared in step 2 is poured into a watch glass and placed in an oven, and dried ...

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Abstract

The invention discloses a zinc oxide-doped polyvinylidene fluoride (PVDF) dielectric thin-film material and a preparation method thereof; the dielectric thin-film material is a high dielectric-constant thin-film material which is prepared in a manner that claviform nano-zinc oxide is doped in the PVDF according to the seepage theory. The preparation method comprises the step that the claviform nano-zinc oxide is doped in the PVDF, and with the frequency of 100Hz, the dielectric constant of the PVDF doped with the claviform nano-zinc oxide can reach 230.

Description

Technical field [0001] The invention relates to a dielectric material that can be used as a capacitor. More specifically, it refers to a dielectric film material of polyvinylidene fluoride (PVDF) doped with zinc oxide (ZnO) prepared by a solution blending method. Background technique [0002] Dielectric material, that is, dielectric, refers to a substance that can establish polarization under the action of an electric field. It has the ability of electrical polarization and transfers and stores electricity in an electrical polarization method that does not coincide with the center of gravity of positive and negative charges. High dielectric material is a kind of insulating material with very broad application prospects. Because of its good performance of storing electric energy and uniform electric field, it has very important applications in the electronics, electrical machinery and cable industries, mainly used in capacitors. . [0003] The ratio of the capacitance of a capacit...

Claims

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Application Information

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IPC IPC(8): H01B3/44H01G4/14C08L27/16C08K3/22C08J5/18
Inventor 邓元王广胜李娜党宇
Owner BEIHANG UNIV
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