Structure of nanometer line cold-cathode electron source array with grid and method for producing the same as well as application of flat panel display

A manufacturing method and nanowire technology are applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., to achieve the effects of high controllability and simple process

Active Publication Date: 2009-07-29
SUN YAT SEN UNIV
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Problems solved by technology

At present, only a few reports have realized the fabrication of a nanowire cold cathode electr

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  • Structure of nanometer line cold-cathode electron source array with grid and method for producing the same as well as application of flat panel display
  • Structure of nanometer line cold-cathode electron source array with grid and method for producing the same as well as application of flat panel display
  • Structure of nanometer line cold-cathode electron source array with grid and method for producing the same as well as application of flat panel display

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Example Embodiment

[0054] Example

[0055] This embodiment presents the manufacturing process of the electron source array using copper oxide nanowires as the cold cathode material. For the specific manufacturing process steps, please refer to the attached Figure 7 . First, the glass substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 20 minutes, dried with nitrogen, and then dried. On the glass substrate, the cathode electrode strips are prepared by the DC magnetron sputtering vacuum coating technology and the stripping process. The cathode electrode strip is composed of a chromium film and an aluminum film, the thickness of which is 120nm and 100nm, respectively. A plasma-enhanced vapor deposition method is used to prepare a silicon nitride and silicon dioxide composite insulating layer film, with a total thickness of 1.5 μm. The grid electrode strips are prepared by DC magnetron sputtering vacuum coating technology and stripping process. The gate electrode strip i...

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Abstract

The invention discloses a structure of a nano-wire cold cathode electron source array with a grid electrode, and a production method and an application thereof in flat panel display. The electron source array structure comprises a substrate, a cathode electrode strip and a grid electrode strip which are mutually crossly arranged and produced on the substrate, an insulating layer between a cathode and the grid electrode, and a nano-wire cold cathode array produced on the cathode electrode strip. The electron source array structure is produced by adopting a method combining a film micro-processing technology and a self-assembly growth technology. In the method, a nano-wire cold cathode is made by adopting a direct oxidation method without catalyst. In addition, a covering layer is produced on the cathode for protecting a source material required for the growth of nano-wires and limiting the growth of the nano-wires in a region close to the grid electrode. The electron source array structure adopts the nano-wires as the cold cathode, has simple production method and technology as well as high controllability, and can be applied to panel display devices of field emission.

Description

technical field [0001] The present invention relates to a structure of a field emission electron source array and a manufacturing method thereof, in particular to a structure of an electron source array using metal oxide nanowires as a cold cathode material and a manufacturing method thereof. Background technique [0002] Cold cathode electron source arrays are widely used in field emission displays, X-ray sources and microwave devices. So far, the researched cold cathode electron source arrays mainly use cold cathodes of quasi-one-dimensional nanomaterials such as microtips, diamond films and diamond-like films, or carbon nanotubes. [0003] The cold cathode electron source using micro-tips has reached a high level in terms of performance, and products have appeared (S.Itoh et al, Journal of the SID 15 / 12, 1057-1064(2007)). However, its manufacturing process requires high-resolution photolithography, the processing and manufacturing conditions are harsh, the cost is high, ...

Claims

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Application Information

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IPC IPC(8): H01J1/304H01J9/02
Inventor 许宁生陈军詹润泽麦强邓少芝佘峻聪
Owner SUN YAT SEN UNIV
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