Plasma etching method and plasma etching apparatus

Abstract

The invention provides a plasma etching method and a plasma etching device, which are capable of controlling profile of the etching and prohibiting the generation of particles resulted from etching a treatment vessel and the like. Once a cleaning procedure (a) is implemented, the plasma, which is obtained by subjecting the cleaning gas to plasma treatment, is utilized to remove adhesions adhered to the treatment vessel (2); once a filming procedure (b) is implemented, the plasma, which subjects a filming gas containing carbon and fluorine to plasma treatment, is utilized to form a CF film at a part exposed to the plasma inside the treatment vessel; once an etching procedure (c) is implemented, a wafer W is carried on a carrying table inside the treatment vessel and the plasma subjecting an etching gas to plasma treatment is utilized to etch the wafer W; and once a procedure (d) of moving the wafer W out of the treatment vessel after the etching procedure (c) is implemented, the procedures (a)-(d) are implemented upon the end of the procedure (d).

Description

technical field [0001] The present invention relates to the technique of performing plasma etching on a substrate. Background technique [0002] For example, in the manufacturing process of a semiconductor substrate such as a semiconductor wafer W (hereinafter referred to as a "wafer") or an FPD substrate, there is a step of performing an etching process on the substrate under a reduced pressure atmosphere. refer to Figure 13 An example of a plasma etching apparatus for performing this step will be briefly described. In the figure, reference numeral 1 denotes a vacuum chamber, and a mounting table 11 for mounting a substrate such as a wafer W is provided inside the vacuum chamber 1. Further, a processing gas supply unit 12 serving as an upper electrode for plasma generation is provided to face the mounting table 11 . The processing gas is supplied from the processing gas supply unit 12 into the vacuum chamber 1, and the inside of the vacuum chamber 1 is evacuated by a vacu...

AI Technical Summary

Problems solved by technology

However, sometimes the etching conditions are changed, and the yttrium oxide itself is also etched, and yttrium oxide contamination of the wafer W may occur.

At this time, the following countermeasures have been studied, that is, by heating the yttrium oxide coated on the vacuum chamber 1 or the like, or by irradiating laser light, the surface of the yttrium oxide is densely hardened to make it difficult to be etched, but the current situation is that this method It has not yet been put into practical use

In addition, if the vacuum chamber 1 and the above-mentioned components are consumed by etching, their lifespan will be shortened, so the replacement cycle will be shortened, and the cost of parts (parts) per unit time (COC) will increase, resulting in the device becoming high price problem

Images