Electric bi-stable device based on composite film of semi-conductor nano crystalline and polymer
A technology of bistable devices and composite films, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve the problem of low current switching of electric bistable devices
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Embodiment 1
[0020] An electric bistable device based on a composite thin film of semiconductor nanocrystals and polymers. The device is made of indium tin oxide (ITO) conductive glass on a conductive substrate 1, and a buffer layer 2 is prepared by a spin-coating process. The spin-coated The speed is 5000 rpm. The functional active layer 3 above the buffer layer 2 is also prepared by a spin-coating process. This layer is made of cuprous sulfide nanocrystals and conjugated polymer poly(2-methoxy-5-(2) coated with dodecanethiol. -Ethylhexyloxy)-1,4-phenyleneethylene) mixed film, spin-coated at 1000 rpm. On top of the functional active layer 3 is a vacuum-evaporated aluminum electrode 4 .
[0021] Materials used in this example:
[0022] The material of the buffer layer 2 is sulfonated polystyrene-doped poly-3,4-ethylenedioxythiophene (PEDOT:PSS), and the thickness of the buffer layer 2 is 50 nm.
[0023] The material of the functional active layer 3 is cuprous sulfide nanocrystal coated ...
Embodiment 2
[0026] An electric bistable device based on a composite thin film of semiconductor nanocrystals and polymers. The device is made of indium tin oxide (ITO) conductive glass on a conductive substrate 1, and a buffer layer 2 is prepared by a spin-coating process. The spin-coated The speed is 5000 rpm. The functional active layer 3 above the buffer layer 2 is also prepared by a spin-coating process. This layer is made of cuprous sulfide nanocrystals and conjugated polymer poly(2-methoxy-5-(2) coated with dodecanethiol. -Ethylhexyloxy)-1,4-phenyleneethylene) mixed film, spin-coated at 1000 rpm. On top of the functional active layer 3 is a vacuum-evaporated aluminum electrode 4 .
[0027] Materials used in this example:
[0028] The material of the buffer layer 2 is poly-3,4-ethylenedioxythiophene doped with sulfonated polystyrene, and the thickness of the buffer layer 2 is 100 nm.
[0029] The material of the functional active layer 3 is cuprous sulfide nanocrystal coated with 7...
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