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Method for manufacturing LED

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as insufficient optical performance, and achieve the effects of improving scattering performance, improving thermal conductivity, and enhancing luminous efficiency.

Inactive Publication Date: 2010-08-18
东莞市天鑫光电科技有限公司
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a method for manufacturing LED light-emitting diodes, adjust the luminous intensity and color of light-emitting diodes, and solve the problem of insufficient optical performance of existing light-emitting diodes

Method used

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Embodiment Construction

[0022] A method for manufacturing an LED light-emitting diode, the steps of which are as follows:

[0023] a. First, GaN-based LED crystal epitaxial wafers are made on the substrate. This process is mainly completed in a metal-organic chemical vapor deposition wafer furnace (MOCVD) to prepare the material sources required for making GaN-based LED crystal epitaxial wafers. After mixing with various high-purity gases, the core component GaN-based LED crystal epitaxial wafers can be gradually prepared according to the requirements of the process;

[0024] b. Attach the prepared GaN-based LED crystal epitaxial wafer to the flipping film and separate the crystal with a wafer expander;

[0025] c. Dot the primer on the GaN-based LED crystal epitaxial wafer, add it in two times, and add the same amount each time, then fix it on the bottom plate, bake it and carry out the wire bonding operation. The operation method is to separate the two gold wires Connected to the anode and cathode...

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Abstract

The invention discloses a method for manufacturing an LED, comprising the steps: a. firstly a gallium nitride (GaN) based wafer is manufactured on an underlay; b. a core component LED crystal epitaxial wafer is manufactured on the underlay; c. manufactured LED crystals are attached on a crystal turning membrane and are separated by a wafer expansion machine; d. base rubber is deposited on the crystal by a two-step method, and the adding proportion in each step is unlimited, the wafer is fixed on a bottom plate and line welding operation is carried out after being dried; e. fluorescent powder is added in silicone resin for manufacturing light decay resistant virgin rubber, the mixing and stirring are carried out for at least 25 minutes, and then epoxy resin glue is added, after the second stirring, the manufactured gluewater is deposited on the wafer, and the drying operation is carried out by a two-step temperature control method; f. the epoxy resin is filled for constructing outer surface encapsulation of the light emitting diode; g. after short drying, demoulding is carried out and remain supporting feet are cut off, the LED light emitting diode is packaged and enters warehouse after being detected.

Description

technical field [0001] The invention relates to a method for manufacturing LED light-emitting diodes. Background technique [0002] The diode crystal is a p-n structure formed by p-type semiconductor and n-type semiconductor, and a space charge layer is formed on both sides of the interface, which has unidirectional conductivity. Light-emitting diode (LED) is a kind of diode. It is a light-emitting display device made of semiconductor materials such as gallium phosphide, which can directly convert electrical energy into light energy. When a certain current passes through it, it will emit light. Light-emitting diodes are divided into red light, blue light, etc. according to the color of the tube body. Because white light is required in the lighting system, LEDs that can emit white light are required. White light is a kind of mixed light, which is formed by mixing light of various wavelengths. The existing white light LED is mainly realized by phosphor powder conversion. The ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 鲁新舫
Owner 东莞市天鑫光电科技有限公司
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