Unlock instant, AI-driven research and patent intelligence for your innovation.

P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for producing p-type semiconductor material

A manufacturing method and semiconductor technology, which are used in the manufacture of semiconductor/solid-state devices, semiconductor devices, electroluminescent light sources, etc., can solve problems such as loss of conductivity and inability to use, and achieve the effect of improving luminous brightness

Inactive Publication Date: 2011-08-10
HOYA CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials are only used as single crystal thin films, and when used as polycrystalline films, the electrical conductivity is significantly lost, so they cannot be formed and used on glass substrates and polymer substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for producing p-type semiconductor material
  • P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for producing p-type semiconductor material
  • P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for producing p-type semiconductor material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] In Example 1, an epitaxial film of Ag-doped ZnSe was formed on a p-GaAs substrate to form a semiconductor element.

[0063] The evaporator is used to reach a vacuum of 1×10 -8 Torr's evaporator. Heat the BN crucible with 1g of ZnSe raw material to 830°C, add 0.1g of Ag 2 The BN crucible of Se was heated to 775°C. On the other hand, the temperature of the p-GaAs substrate was raised to 250°C with an IR lamp (infrared lamp), and the gate under the substrate was opened to form a film.

[0064] Epitaxial growth was confirmed by in-plane X-ray diffraction and transmission electron microscopy.

[0065] The film thickness of the epitaxial film measured by a stylus height gauge was 400 nm, and the chemical composition analyzed by ICP method was Zn:Se:Ag=49.4:50.2:0.33 (at%). In addition, the Ag concentration analyzed by the SIMS method was 1×10 20 cm -3 , uniform in the film thickness direction. In addition, the relative resistivity is 6.8×10 4 Ωc m. Such as Figure 4 ...

Embodiment 2

[0067] In Example 2, an Ag-doped ZnSe film was formed on an ITO-attached glass substrate to form a semiconductor element. Film-forming conditions are the same as in Example 1.

[0068] The ZnSe film thickness measured by a stylus height gauge is 400 nm, and the chemical composition analyzed by ICP method is Zn:Se:Ag=49.4:50.2:0.33 (at%). In addition, the Ag concentration analyzed by the SIMS method was 1×10 20 cm -3 , uniform in the film thickness direction. Observation of the cross section by TEM confirmed the columnar particle structure. The work function measured by ultraviolet electron spectroscopy was 6.3 eV. In addition, the relative resistivity is 6.8×10 4 Ωc m. As in Embodiment 1, the current-voltage characteristics in the film thickness direction are good.

Embodiment 3

[0070] In Example 3, an epitaxial film of Ag-doped ZnSe was formed on a p-GaAs substrate to form a semiconductor element.

[0071] The evaporator is used to reach a vacuum of 1×10 -8 Torr's evaporator. Heat the BN crucible with 1g of ZnSe raw material to 830°C, add 0.1g of Ag 2 The BN crucible of Se was heated to 775°C. On the other hand, the temperature of the p-GaAs substrate was raised to 250°C with an IR lamp (infrared lamp), and the gate under the substrate was opened to form a film.

[0072] Epitaxial growth was confirmed by an in-plane X-ray diffraction method and a transmission electron microscope. The film thickness of the Ag-doped ZnSe film measured by a stylus altimeter is 400 nm, and the chemical composition analyzed by ICP method is Zn:Se:Ag=49.7:50.2:0.08 (at%). In addition, the Ag concentration analyzed by the SIMS method was 3×10 19 cm -3 , uniform in the film thickness direction. The work function measured by ultraviolet electron spectroscopy was 6.3 eV....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electron work functionaaaaaaaaaa
electron work functionaaaaaaaaaa
Login to View More

Abstract

The objective of the present invention is to provide a p-type semiconductor material which has a band matching with a hole injection layer and is suitable for an anode electrode which can be formed on a glass substrate or a polymer substrate. Also disclosed is a semiconductor device. The p-type semiconductor material which is characterized in that: a compound containing Zn and Se further contains from 1*10<18> to 5*10<20>cm<-3> of Ag. The semiconductor device which is characterized by comprising a substrate and a p-type electrode layer arranged on the substrate and containing the above-mentioned p-type semiconductor material on the substrate and containing the above-mentioned p-type semiconductor material.

Description

technical field [0001] The present invention relates to a p-type semiconductor material having a compound containing Zn and Se, a semiconductor element and an organic electroluminescent element including the p-type semiconductor material, and a method for producing the p-type semiconductor material. Background technique [0002] For hole injection electrodes (hereinafter referred to as p-type electrodes) of conventional organic electroluminescence elements (hereinafter referred to as organic EL elements), ITO (indium tin oxide) is often used from the viewpoint of transparency and ease of availability. . ITO is formed on a glass substrate or a polymer substrate by a sputtering method, an evaporation method, or the like. As a typical laminated structure of an organic EL device, ITO / NPB / Alq3 / Mg / Ag is mentioned, for example. [0003] Here, NPB is N,N,-bis(1-naphthyl)-N,N'-diphenyl 1-1,1'biphenyl-4,4'-diamine (N,N,-bis(1 -naphyl)-N, N'-dipheny 1-1, 1'biphenyl-4, 4'-diamne), fu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05B33/28H01L51/50H05B33/10H05B33/26
CPCH01L51/5206H05B33/26H10K50/81H10K50/813
Inventor 折田政宽成岛隆柳田裕昭
Owner HOYA CORP