Method for preparing single-crystal copper bonding wire

A technology of bonding wire and single crystal copper, which is applied in the field of processing and preparation of single crystal copper materials, can solve problems such as grain boundary fracture, and achieve the effects of stable performance, overcoming many broken ends and high strength

Inactive Publication Date: 2009-09-09
LANZHOU UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the oxygen-free copper rod of the copper bonding wire, due to the large number of grain boundaries in its internal structure, when drawing ultra-fine wires, fractures will occur at the grain boundaries, and it must be processed to less than 0.03mm to ensure good There will be more difficulties in performance consistency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1, the concrete preparation method of single crystal copper bonding wire is:

[0013] ①Using high vacuum furnace (vacuum degree reaches 10 -2 ~10 -4 MPa) to melt high-purity copper (purity of 99.995%), then heat up to 1100°C and refine for 60 minutes. The entire melting process is protected by high-purity argon (99.9%) and drawn by directional solidification. 8mm single crystal copper rod;

[0014] ② will The 8mm high-purity single crystal copper rod is cold-worked to 0.95mm, the drawing rate per pass is 15%, and the drawing speed is controlled at 40m / min; then the single crystal copper rod is drawn using the passes and processing rates listed in Table 1. 0.05mm; the drawing speed is 600m / min; the surface roughness Ra of the mold above 0.5mm reaches 0.025, and the surface roughness Ra of the mold below 0.5mm is higher than 0.025; keep the drawing tower wheel, guide wheel, take-up reel and other components highly smooth, The surface roughness Ra is highe...

Embodiment 2

[0020] Embodiment 2: The specific preparation method of single crystal copper bonding wire is:

[0021] ①Using high vacuum furnace (vacuum degree reaches 10 -2 ~10 -4 MPa) to melt high-purity copper (purity 99.999%), then heat up to 1120°C, and refine for 70 minutes. The entire smelting process is protected by high-purity argon (99.995%), and single-crystal copper rods are drawn by directional solidification;

[0022] ②Cold work the 6mm high-purity single crystal copper rod to 1.001mm, the drawing rate per pass is 18%, and the drawing speed is controlled at 45m / min; The copper rod is drawn 0.042mm; the drawing speed is 450m / min; the surface roughness Ra of the mold above 0.5mm is 0.025, and the surface roughness Ra of the mold below 0.5mm is higher than 0.025; keep the drawing drum, guide wheel, take-up reel, etc. The parts are highly smooth, and the surface roughness Ra is higher than 0.025; the drawing lubricant is a water-soluble lubricant with a concentration of 0.4%, an...

Embodiment 3

[0028] Embodiment 3: The specific preparation method of single crystal copper bonding wire is:

[0029] ①Using high vacuum furnace (vacuum degree reaches 10 -2 ~10 -4 MPa) to melt high-purity copper (purity 99.999%), then heat up to 1140°C and refine for 80 minutes. The entire melting process is protected by high-purity argon (99.999%), and single-crystal copper rods are drawn by directional solidification;

[0030] ②Cold work the 4mm high-purity single crystal copper rod to 1.040mm, the drawing rate per pass is 20%, and the drawing speed is controlled at 50m / min; The copper rod is drawn 0.038mm; the drawing speed is 500m / min; the surface roughness Ra of the mold above 0.5mm is 0.025, and the surface roughness Ra of the mold below 0.5mm is higher than 0.025; keep the drawing drum, guide wheel, take-up reel, etc. The parts are highly smooth and the surface roughness Ra is higher than 0.025; the drawing lubricant is a water-soluble lubricant with a concentration of 0.5%, and t...

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PUM

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Abstract

The invention relates to a method for preparing a single-crystal copper bonding wire, which uses copper as a raw material. The method comprises the following steps: melting high purity copper of which the purity is higher than 99.995 percent by using a high-vacuum furnace, raising the temperature to between 1,100 and 1,180 DEG C, refining the copper for 60 to 120 minutes, and adopting high purity argon for protection in the whole melting process; broaching single-crystal copper rods of phi 4 to phi 8 mm in a directional solidification mode, and then coldworking the single-crystal copper rods to between phi 0.95 and phi 1.102 mm with the broaching working rate of 15 to 25 percent for each gate; broaching the single-crystal copper rods to between 0.020 and 0.05 mm with 47 to 70 gates and the working rate of 7.59 to 17.82 percent for each gate; and carrying out sonicleaning on the surface of the single-crystal copper bonding wire when the wiredrawing temperature is between 35 and 45 DEG C, carrying out heat treatment on the cleaned single-crystal copper bonding wire, and using H2+Ar2 for protection with the temperature of between 410 and 425 DEG C, the time of between 0.7 and 2.0s and the annealing rewinding tension of between 0.6 and 2.8g.

Description

technical field [0001] The invention relates to the processing and preparation of single crystal copper materials. Background technique [0002] Wire bonding is dominant in chip connection due to its simple process, low cost, and suitability for a variety of packaging forms. At present, more than 90% of all package pins are connected by wire bonding. Compared with gold wire and aluminum wire, copper bonding wire has excellent mechanical properties, electrical properties, thermal properties and low growth of intermetallic compounds, which greatly improves chip frequency and reliability, and adapts to low cost, thin The development of spacing and high-terminal component packaging. In addition, the transition from wafer aluminum metallization to copper metallization makes for new package designs of high-speed devices, the choice of short copper wire bonding and copper pads with a pitch of less than 50 μm will become a powerful flip-chip process in the packaging market. compet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B21C1/00C22F1/08C22B15/14B22D27/04C30B29/02C30B11/00
CPCH01L24/43H01L2224/43H01L2224/45H01L2224/45144H01L2224/45147H01L2924/01204H01L2924/00014H01L2924/00H01L2924/00012
Inventor 丁雨田曹军胡勇许广济寇生中
Owner LANZHOU UNIVERSITY OF TECHNOLOGY
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