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Silicon base grown AlGaInP LED epitaxial wafer and preparation method thereof

A technology of LED epitaxial wafers and aluminum gallium indium phosphide, which is applied in the field of optoelectronics, can solve the problems of low luminous efficiency of light-emitting diodes, and achieve the effects of improving high-current working ability, large size, and mature preparation technology

Inactive Publication Date: 2009-09-23
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dislocations in AlGaInP materials can act as non-radiative recombination centers, resulting in low luminous efficiency of light-emitting diodes. Therefore, there is no direct epitaxial growth of AlGaInP light-emitting layers on silicon substrates to prepare light-emitting diodes. report

Method used

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  • Silicon base grown AlGaInP LED epitaxial wafer and preparation method thereof
  • Silicon base grown AlGaInP LED epitaxial wafer and preparation method thereof
  • Silicon base grown AlGaInP LED epitaxial wafer and preparation method thereof

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Experimental program
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Embodiment 1

[0029] Such as figure 1As shown, the silicon substrate in the AlGaInP LED epitaxial wafer grown on the silicon substrate of this embodiment adopts N-type silicon material, and the n-type GaAs buffer layer (arsenic) is sequentially included on the silicon substrate from bottom to top. GaN low-temperature buffer layer and GaAs high-temperature buffer layer), n-type DBR reflective layer, n-type AlGaInP lower confinement layer, multiple quantum wells (MQWs) light-emitting region (active region), p-type aluminum Gallium indium phosphide upper confinement layer, p-type current expansion layer (window layer), and then use the die preparation technology to produce an LED chip with the P-side electrode (positive electrode) on the top and the N-side electrode (negative electrode) on the bottom.

[0030] The preparation method of the AlGaInP LED epitaxial wafer grown on the above silicon substrate comprises the following steps:

[0031] (1) Silicon substrate preparation: first place the...

Embodiment 2

[0042] Such as figure 2 As shown, the silicon substrate in the AlGaInP LED epitaxial wafer grown on the silicon substrate of this embodiment adopts a p-type silicon material, and a p-type gallium arsenide buffer layer (arsenic GaN low-temperature buffer layer and GaAs high-temperature buffer layer), p-type DBR reflective layer, p-type AlGaInP lower confinement layer, multiple quantum wells (MQWs) light-emitting region (active region), n-type aluminum Gallium indium phosphide upper confinement layer, n-type current expansion layer (window layer), and then use the die preparation technology to manufacture LED chips with the N-side electrode (negative electrode) on the top and the P-side electrode (positive electrode) on the bottom.

[0043] The preparation method of the AlGaInP LED epitaxial wafer grown on the above silicon substrate comprises the following steps:

[0044] (1) Carry out silicon substrate preparation and heat treatment by the process described in embodiment 1; ...

Embodiment 3

[0054] Such as image 3As shown, the silicon substrate in the AlGaInP LED epitaxial wafer grown on the silicon substrate of this embodiment adopts semi-insulating silicon material, and the silicon substrate 1 includes a gallium arsenide buffer layer (arsenide Gallium low-temperature buffer layer and gallium arsenide high-temperature buffer layer), n-type gallium arsenide ohmic contact layer, n-type DBR reflective layer, n-type aluminum gallium indium phosphorus lower confinement layer, multiple quantum wells (MQWs) light emitting region ( Active region), p-type aluminum gallium indium phosphorus upper confinement layer, p-type current spreading layer (window layer), and then use the die preparation technology to make the P-side electrode (positive electrode) and N-side electrode (negative electrode) on the same top LED chips.

[0055] The preparation method of the AlGaInP LED epitaxial wafer grown on the above silicon substrate comprises the following steps:

[0056] (1) Car...

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Abstract

The invention discloses a silicon base grown AlGaInP LED epitaxial wafer and a preparation method thereof. The LED epitaxial wafer adopts a silicon base which sequentially comprises a gallium arsenide low-temperature buffer layer, a gallium arsenide high-temperature buffer layer, a DBR reflecting layer, an AlGaInP lower limiting layer, a multiple quantum well light emitting area, an AlGaInP upper limiting layer and a current expansion layer from bottom to top. The preparation method comprises the steps that metal organic chemical vapor deposition equipment is directly used for sequentially growing layer by layer. The AlGaInP LED epitaxial wafer solves the problem of heat expansion coefficient mismatch between the silicon base and the AlGaInP light emitting layer and directly and epitaxially grows the epitaxial material on the silicon base. The heat conductivity of silicon (145.7W / m. K) is 3.3 times of that of the AlGaInP base (44W / m. K) so as to improve the heavy current working capability of the silicon.

Description

technical field [0001] The invention relates to a light emitting diode (light emitting diode, LED), which is characterized in that a silicon chip is used as a substrate to directly epitaxially grow a high-quality aluminum gallium indium phosphorus light emitting diode, and belongs to the field of optoelectronic technology. Background technique [0002] It has excellent performance in yellow-green, orange, orange-red, yellow, and red spectral bands, and has broad application prospects in RGB white light sources, full-color displays, traffic lights, and urban lighting projects. [0003] In the prior art, aluminum gallium indium phosphorous light-emitting diodes (AlGaInP LEDs) are prepared by epitaxial growth on GaAs (gallium arsenide) substrates. Aluminum Gallium Indium Phosphorus Light Emitting Diodes (AlGaInP LEDs) grown epitaxially on GaAs substrates have been industrialized. However, because GaAs absorbs visible light, its thermal conductivity is small, and the heat gener...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 李树强徐现刚张新马光宇吴小强卢振
Owner Shandong Huaguang Optoelectronics Co. Ltd.
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