Sulfurized gallium and barium monocrystal as well as growing method and infrared nonlinear optical device thereof

A nonlinear optics, single crystal technology, applied in nonlinear optics, single crystal growth, crystal growth and other directions, can solve the problem of non-linear optical performance test of barium gallium sulfide single crystal, no single crystal of barium gallium sulfide. Single crystal and other problems, to achieve the effect of high hardness, good mechanical properties, not easy to break and deliquescence

Active Publication Date: 2009-09-30
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there have been no reports on the preparation of barium gallium sulfide single crystals with a size sufficient for physical property testing, nor have there been reports

Method used

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  • Sulfurized gallium and barium monocrystal as well as growing method and infrared nonlinear optical device thereof
  • Sulfurized gallium and barium monocrystal as well as growing method and infrared nonlinear optical device thereof
  • Sulfurized gallium and barium monocrystal as well as growing method and infrared nonlinear optical device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Synthesis of compound BaGa by high temperature solid phase reaction 4 S 7

[0023] Raw material used: BaS 0.8470g (0.005mol)

[0024] Ga 1.3945g (0.02mol)

[0025] S 0.9620g (0.03mol)

[0026] The chemical reaction equation is:

[0027] BaS+4Ga+6S=BaGa 4 S 7

[0028] The specific operation steps are as follows: After weighing the above-mentioned raw materials according to the above-mentioned dosage, put them in a mortar and mix them evenly and carefully grind them, then put them into a graphite crucible of Φ12×40mm, press them tightly with a medicine spoon, and put them in quartz In the ampoule, after 4-6 hours of vacuuming, when the internal pressure of the quartz ampoule is about 0.1Pa, seal the tube with a hydrogen-oxygen flame and place it in a muffle furnace to slowly raise the temperature to 300°C and heat at a constant temperature for 5 hours, and then to 500 Heat at a constant temperature for 5 hours, then heat to 700°C and heat at a constant tem...

Embodiment 2

[0029] Example 2 Synthesis of compound BaGa by high temperature solid phase reaction 4 S 7

[0030] Raw material used: BaS 0.8470g (0.005mol)

[0031] Ga 2 S 3 2.3564g (0.01mol)

[0032]The chemical reaction equation is:

[0033] BaS+2 Ga 2 S 3 =BaGa 4 S 7

[0034] The specific operation steps are as follows: After weighing the above-mentioned raw materials according to the above-mentioned dosage, put them in a mortar and mix them evenly and carefully grind them, then put them into a Φ12×40mm graphite crucible, press them tightly with a medicine spoon and put them in the quartz In the ampoule, after 4-6 hours of vacuuming, when the internal pressure of the quartz ampoule is about 0.1Pa, seal the tube with a hydrogen-oxygen flame and place it in a muffle furnace to slowly raise the temperature to 700°C and heat at a constant temperature for 20 hours, and then heat to 900 Sinter at a constant temperature for 48 hours at ℃, take out the crucible after cooling, and the sam...

Embodiment 3

[0035] Example 3 Using molten salt method to grow crystal BaGa 4 S 7

[0036] The crystal growth device is a self-made resistance wire heating furnace, and the temperature control equipment is a 908PHK20 programmable automatic temperature controller.

[0037] Raw material used: BaS 0.8470g (0.005mol)

[0038] Ga 1.3945g (0.02mol)

[0039] S 0.9620g (0.03mol)

[0040] The specific operation steps are as follows: After weighing the above-mentioned raw materials according to the above-mentioned dosage, mix them evenly, then put them into a graphite crucible of Φ12×60mm, press them tightly with a medicine spoon and cover them, and put them in a quartz ampoule for 4-6 hours. After vacuuming, when the internal pressure of the quartz ampoule is about 0.1Pa, seal the tube with a hydrogen-oxygen flame and place it in a growth furnace to slowly raise the temperature to 300°C and heat it at a constant temperature for 5 hours, then to 500°C and heat it at a constant tempera...

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Abstract

The invention relates to a sulfurized gallium and barium monocrystal as well as a growing method and an infrared nonlinear optical device thereof. A molecular formula of the sulfurized gallium and barium monocrystal is BaGa4S7, the sulfurized gallium and barium monocrystal belongs to the field of rhombic systems, a space group is Pmn21, and a cell parameter is as follows: a=14.755 A, b=6.228 A, c=5.929 A, and alpha=beta=gamma=90 DEG. The nonlinear optical materials are prepared by adopting a crucible decent method to obtain compositions and monocrystals of the same and can be used for manufacturing a secondary harmonic generator, an upper frequency converter, a lower frequency converter and an optical parametric oscillator.

Description

Technical field [0001] The invention relates to a nonlinear optical device made of compound single crystals, especially BaGa 4 S 7 (BGS) Non-linear optical device made of single crystal. Background technique [0002] The nonlinear optical effect of the crystal refers to such an effect: when a laser beam with a certain polarization direction passes through a nonlinear optical crystal (such as BGS) in a certain incident direction, the frequency of the beam changes. [0003] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here the non-linear optical effect refers to the effects of frequency doubling, sum frequency, difference frequency, optical parametric oscillation and optical parametric amplification. Only crystals that do not have a center of symmetry can have nonlinear optical effects. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametr...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B11/00G02F1/355
Inventor 叶宁林新松张戈
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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