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Memister

A resistance memory and resistance technology, applied in the field of microelectronics, can solve problems such as instability, limited oxygen content, lack of literature and patent buffer layers, etc.

Inactive Publication Date: 2009-09-30
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since there is only a storage medium between the bottom electrode and the top electrode, due to the limited oxygen content in the dielectric layer (especially at the electrode-oxide medium interface) during the resistance transition process, the difference between the high and low resistance of the memory cell during the resistance switching process is not enough. Disadvantages such as large and unstable
For example, in the literature reports, the resistance is not particularly stable and the durability is insufficient. There are also articles and patents pointing out that a buffer oxide layer is inserted between the electrodes. Most of the bias voltage applied by the unit falls in the buffer layer. On the other hand, if the resistance of the buffer layer is too small, the storage medium cannot form a strong electric field inside due to insufficient bias voltage, and it cannot achieve the requirements pointed out in the literature and patents. The role of the buffer layer; on the one hand, it will reduce the performance of the device, on the other hand, in order to apply sufficient bias voltage to the storage medium, an internal strong electric field will be formed to increase the operating voltage of the device

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The structure of a unit device of resistive memory is as follows Figure 3a Shown: the arrangement sequence of each layer of the structure of the resistive memory is: substrate 300, bottom electrode 301, storage medium 303, conductive oxide layer 302, insulating layer 304, memory unit and top electrode 305 formed in the memory unit .

Embodiment 2

[0028] The structure of a unit device of resistive memory is as follows Figure 3b As shown, the structure of the resistive memory can also be as follows: the arrangement order of each layer is: substrate 300, bottom electrode 301, conductive oxide layer 302, storage medium 303, insulating layer 304, memory unit, and The top electrode 305.

Embodiment 3

[0030] The structure of a unit device of resistive memory is as follows Figure 3c As shown, the structure of the resistive memory can also be: the order of the layers is: substrate 300, bottom electrode 301, conductive oxide layer 302-1, storage medium 303, conductive oxide layer 302-2, insulating layer 304 , a memory cell and a top electrode 305 formed within the memory cell.

[0031] In Embodiments 1, 2, and 3, the size of the device is defined by the size of the top electrode 305, but the embodiments shown in the present invention should not be considered limited to the specific shape of the region shown in the figure, but include actual devices Various shapes are designed during production, and the device shapes in the examples are represented by rectangles.

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Abstract

The invention provides a nonvolatile memister having a conducting oxide layer and providing oxygen for a variable resistance storage medium. The nonvolatile memister comprises a bottom electrode, a variable resistance storage medium layer which is oxide, conducting oxide serving as an oxygen storage, and a top electrode. The inserted conducting oxide layer serves as the medium layer to provide oxygen vacancies during the inversion of a resistor to improve the inversion property, stability and durability of the storage medium.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a nonvolatile variable resistance memory device. Background technique [0002] In the 21st century, with the rapid development of computer technology, the Internet and new popular electronic products, the demand for electronic information storage and processing products is showing a rapid upward trend. Storage technology permeates every corner of semiconductor products. As traditional semiconductor technology steps into the limit of micro-nano processing, flash storage, which occupies 90% of the market share, has encountered a development bottleneck due to its low integration and low operating speed. Find next-generation non-volatile memory devices that are superior to current CMOS processes. Among them, Resistance Random Access Memory (RRAM) has attracted the attention and research of scientific research institutes, universities and enterprises all over the world in recen...

Claims

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Application Information

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IPC IPC(8): H01L45/00G11C11/56
Inventor 张培健赵宏武孟洋刘紫玉廖昭亮苏涛潘新宇梁学锦陈东敏
Owner INST OF PHYSICS - CHINESE ACAD OF SCI