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Method for preparing environmentally stable silicon dioxide porous membrane with ultra-low dielectric constant

A technology of ultra-low dielectric constant and porous film, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of complex preparation process of porous films and easy to be affected by the sol process, and achieve good dielectric properties. Constant stability, clear graphics, and the effect of reducing the dielectric constant

Inactive Publication Date: 2009-11-11
XI AN JIAOTONG UNIV
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Problems solved by technology

Generally for this type of SiO 2 The method for surface dehydroxylation modification of porous films is to use hydrocarbons to silanize the surface of the film, and the silanization reaction is usually carried out on SiO 2 When the sol state is carried out, the effect of this method is easily affected by the sol process, and it also makes SiO 2 The preparation process of porous film is complicated

Method used

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Examples

Experimental program
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Effect test

Embodiment Construction

[0013] 1) Preparation of SiO by base catalysis 2 Sol, with PVA as the organic template, in proportion to SiO 2 The sol is mixed and stirred, and SiO is synthesized at 60-100°C 2 / PVA sol;

[0014] 2) SiO 2 / PVA sol was spin-coated on silicon wafers sputtered with platinum electrodes to form wet SiO 2 / PVA film;

[0015] 3) For SiO 2 / PVA wet film undergoes rapid heat treatment at 450-900°C to transform it into amorphous inorganic SiO 2 Porous film;

[0016] 4) This amorphous inorganic SiO 2 The porous film is baked at about 150°C for 1 hour to remove physically adsorbed water;

[0017] 5) Prepare trimethylchlorosilane modification solutions with different volume ratios, which are composed of n-hexane and 5%, 10%, 15%, 20%, 30%, 40%, 50%, 60%, 70% and 80% by volume of trimethylchlorosilane;

[0018] 6) SiO in 4) 2 The porous film is immersed in the above solution for 1-24 hours respectively, and the solution is constantly stirred during this period to continuously up...

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Abstract

The invention relates to a method for preparing an environmentally stable silicon dioxide porous membrane with ultra-low dielectric constant, and a process for carrying out surface hydrophobic modification treatment for an amorphous inorganic SiO2 porous membrane prepared by a wet chemical method. The amorphous inorganic SiO2 porous membrane prepared by using polyvinyl alcohol (PVA) as a template agent has the characteristics of proper porosity, high thermal stability, clear etched graphs, and good compatibility with a microelectronic process. The SiO2 porous membrane is subjected to hydroxyl removal modification treatment by adopting trimethyl chlorosilane, so the surface of the membrane has hydrophobic property, and the membrane displays the performance of ultra-low dielectric constant and has good stability for the environment.

Description

technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit interconnection dielectric materials, in particular to a method for preparing an environmentally stable ultra-low dielectric constant silicon dioxide porous film. Background technique [0002] With the development of VLSI technology, the integration density of integrated circuits is getting higher and higher, and the device size is getting smaller and smaller. The increase of integrated circuit density and the reduction of device size lead to the increase of parasitic capacitance between lines and layers, and the resulting signal crosstalk and delay become very significant, which has become a bottleneck restricting the development of high-speed integrated circuits. [0003] Adopt low dielectric constant (k) material instead of traditional SiO 2 The (k=4) material, as an interconnection medium or an insulating medium between layers, is an effective means to reduce interconnectio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 吴小清任巍史鹏陈晓峰姚熹
Owner XI AN JIAOTONG UNIV
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