Method for cleaning monocrystalline silicon chip

A single crystal silicon wafer and silicon wafer technology, applied in the direction of using liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve problems affecting the conversion efficiency of solar cells, etc.

Inactive Publication Date: 2009-12-02
JIAXING WUSHEN OPTO ELECTRONICS MATERIAL
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

White spots and fingerprints on the surface of monocrystalline silicon wafers caused by poor cleaning will affect the conversion efficiency of solar cells, and removing white spots and fingerprints is a common problem that has not yet been solved in the industry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The present invention will be further described below in conjunction with embodiments.

[0012] The method for cleaning monocrystalline silicon wafers includes the following steps: mortar pre-flushing → degumming → inserting → cleaning → spin-drying and testing, which is characterized by:

[0013] A. Mortar pre-flushing: Hang the cut silicon wafers upside down in the washing tank of the pre-punching machine in order, remove the loading plate, adjust the water pressure as usual, and flush the mortar on the surface of the silicon wafers until the drain is clean. About 40min;

[0014] B. Degumming: Put the silicon wafer upright and put it into the degumming tank, add 70-80℃ warm water from the bottom of the tank with a water pipe to avoid oxidation caused by splashing the warm water on the surface of the silicon wafer, soak the silicon wafer in warm water for about 5 minutes, and take out the silicon wafer , Put it on a clean towel, quickly tear off the adhesive strip, put the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for cleaning a monocrystalline silicon chip, and aims to provide a method for cleaning the monocrystalline silicon chip. Residues of white spots, fingers, mortars and the like on the surface of the silicon chip are removed, and the phenomena of fingerprints and the white spots on the surface of the silicon chip are eliminated, so that the quality and the conversion efficiency of a solar-grade monocrystalline silicon chip are further improved. The method comprises the following steps: mortar pre-flushing, degumming, chip inserting, cleaning, spin drying and detection. Through the steps of the mortar pre-flushing, the degumming, the chip inserting, the cleaning, the spin drying and the detection, the method particularly adopts immersion of fluohydric acid solution and a conventionally different cleaning method, and a worker wears a corresponding glove during different process operations to clean the silicon chip through fluohydric acid immersion and cleaning solution to effectively eliminate the phenomena of the fingerprints and the white spots.

Description

Technical field [0001] The invention relates to the field of semiconductor materials and the field of green new energy, and more specifically to a method for cleaning monocrystalline silicon wafers for solar power generation. Background technique [0002] The particles, organics, metals, adsorbed molecules, micro-roughness, natural oxide layer, etc. produced on the surface of solar-grade monocrystalline silicon wafers during the manufacturing process will seriously affect the performance of solar cell modules. With the development of solar-grade monocrystalline silicon wafers, the requirements for surface cleanliness and surface conditions are getting higher and higher. To obtain high-quality, high-efficiency solar cell modules, only removing the contamination on the surface of the silicon wafer is no longer the ultimate requirement. White spots and fingerprints on the surface of monocrystalline silicon wafers caused by poor cleaning will affect the conversion efficiency of solar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/04B08B3/08
Inventor 张春明张建伟王焕俊
Owner JIAXING WUSHEN OPTO ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap