Method for testing polarity of semiconductor crystal or epitaxial thin film material and test system

Abstract

The invention discloses a method for testing the polarity of semiconductor crystal or epitaxial thin film material, comprising the following steps: irradiating the semiconductor crystal or epitaxial thin film material which is to be tested by utilizing circular polarized light, testing the current direction of the generated no-bias current; and judging the polarity of the semiconductor crystal or epitaxial thin film material which is to be tested according to the current direction of the no-bias current. In addition, the invention further discloses a system for testing the polarity of the semiconductor crystal or epitaxial thin film material. The test system in the invention can work under normal temperature and normal pressure, has high test accuracy, simple and speedy sample preparation, and high test speed, is non-destructive to the tested samples, and has low demand towards the testing personnel with easy operation; the test time of each sample is only 10 minutes; what is more, the whole set of test system is low in price and can greatly reduce test cost.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method and a detection system for detecting the polarity of semiconductor crystals or epitaxial thin film materials. Background technique [0002] In recent decades, optoelectronic devices based on III-V and II-VI compound semiconductor materials have been widely used and created huge economic benefits. As the basis of optoelectronic devices, the growth and physical properties of high-quality III-V and II-VI compound semiconductor materials are particularly important. For the above-mentioned semiconductor materials, the polarity or polarization effect due to the non-centrosymmetric structure has a strong impact on the properties of the semiconductor, especially the optoelectronic properties of its epitaxial film and quantum structure. For example, the polarity of III-nitride wide-bandgap semiconductors has a crucial influence on the optical and electrical properties of the materi...

AI Technical Summary

Problems solved by technology

The most commonly used methods are converged beam electron diffraction and chemical corrosion. The former needs to be measured simultaneously with the transmission electron microscope. Not only is the instrument expensive, sample preparation and instrument operation are difficult, it is destructive to the sample, and it cannot be judged on a large scale.

Although the method of chemical corrosion is relatively simple, its accuracy is poor and it is also destructive to the sample

Although the two methods of X-ray photoelectron spectroscopy and coaxial ion scattering are not destructive to the sample, the test requires an ultra-high vacuum system and has strict requirements on the cleanliness of the sample surface. In addition, the results need to be simulated with the theoretical calculation results. Large volume and low precision

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