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Test structure for measuring thermal conductivity of film

A technology for testing structures and thin films, applied in the field of microelectronics, can solve the problems of complex manufacturing process and test structure, inconvenient measurement, etc.

Inactive Publication Date: 2010-01-06
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, most of the thin film thermal conductivity test methods have complex manufacturing processes and test structures, and need to be operated in a vacuum, and some require complex instrument operations, which have caused inconvenience to the measurement

Method used

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  • Test structure for measuring thermal conductivity of film
  • Test structure for measuring thermal conductivity of film
  • Test structure for measuring thermal conductivity of film

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the drawings:

[0019] The present invention proposes a test structure (such as Figure 5 Shown), including: substrate 1, depositing an insulating layer 2 on the substrate 1, depositing a test structure on the insulating layer 2, the test structure including a test unit (such as figure 2 Shown) and a reference unit (e.g. figure 1 Shown), the reference cell structure includes silicon nitride (Si 3 N 4 ) Film support cantilever arm 3, in Si 3 N 4 On the surface of the thin film support cantilever arm 3, a serpentine metal platinum (Pt) heating temperature detector 4 is sputtered, and the two ends of the serpentine heating temperature detector 4 are respectively provided with two leads 5, 6 and 7, 8 made of metal Pt film , Pt thin film leads 5, 6 and 7, 8 are respectively fixed on the insulating layer 2 by metal aluminum (Al) pads A, B and C, D (side structure such as image 3 Shown), the test unit is e...

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Abstract

The invention discloses a test structure for measuring the thermal conductivity of a film, which comprises a substrate and an insulating layer arranged on the substrate, wherein a test unit is arranged on the insulating layer, and the test unit comprises a reference unit and a test unit. The structure has simple preparation process and convenient test and is particularly suitable for measuring the thermal conductivity of a silicon nitride (Si3N4) film in a natural air environment. An S-shaped heater made of platinum (Pt) is adopted and can achieve more uniform heating temperature and reduce temperature error, and moreover, the S-shaped heater has higher test precision.

Description

Technical field [0001] The invention relates to the technical field of microelectronics, in particular to a test structure for testing the thermal conductivity of a thin film. Background technique [0002] With the rapid development of semiconductor technology and MEMS technology, the size of the device has entered the micro / nano scale. Silicon nitride film is an important film material, which is widely used in semiconductor devices, MEMS devices, and optical devices. As silicon nitride (Si 3 N 4 ) The film has the characteristics of compact structure, high dielectric coefficient, and has the ability to prevent the diffusion of water and sodium ions and the ability to resist oxidation, so it is often used as a surface passivation layer for large-scale integrated circuits and very large-scale integrated circuits. Wait. Because the silicon nitride film has good mechanical strength, it can be used as a supporting structure for the microbridge in the infrared detector. Among them,...

Claims

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Application Information

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IPC IPC(8): G01N25/18B81B7/02
Inventor 蒋亚东吴志明杨利霞
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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