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Preparation method of surface texture of polycrystalline silicon solar cell

A surface texture, solar cell technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of a large number of heavy metal ions, complex process, limited application, etc., achieve low cost, high conversion efficiency, and reduce surface reflectance Effect

Inactive Publication Date: 2010-01-13
CSI CELLS CO LTD +6
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, reactive ion etching requires relatively complex and expensive equipment, and the process is complicated, which limits its application in production; mask etching can greatly reduce the surface reflectivity of polysilicon, but due to its complicated process and expensive equipment, It has not been widely used in industrial production; although the acid corrosion method can obtain a surface texture suitable for production and is easier to control, it produces a large amount of heavy metal ions and causes great pollution to the environment.

Method used

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  • Preparation method of surface texture of polycrystalline silicon solar cell
  • Preparation method of surface texture of polycrystalline silicon solar cell
  • Preparation method of surface texture of polycrystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Mix hydrofluoric acid with a concentration of 17 mol / liter, potassium permanganate with a concentration of 0.01 mol / liter, and modifier sodium nitrite with a concentration of 0.1 mol / liter. The p-type polysilicon chip is soaked in the mixed acid etching solution. The etching temperature is 35° C., and the etching time is 15 minutes. After the etching is completed, the polysilicon wafer is immersed in a 1% NaOH solution and cleaned for 30 seconds. After cleaning, dry it and conduct a reflectivity test. For the test results, please refer to the attached figure 1 shown. It can be seen from the figure that, compared with common polysilicon wafers, the reflectance of the silicon wafers in this embodiment is lower in each wavelength band, with an overall decrease of about 8%.

Embodiment 2

[0025] Mix hydrofluoric acid with a concentration of 13 moles / liter, potassium permanganate with a concentration of 0.05 moles / liter, and modifier sodium nitrite with a concentration of 0.2 moles / liter. The p-type polysilicon chip is soaked in the mixed acid etching solution. The etching temperature is 25° C., and the etching time is 35 minutes. After the etching is completed, the polysilicon wafer is immersed in a NaOH solution with a mass fraction of 1% and cleaned for 20 seconds. After cleaning, dry it and conduct a reflectivity test. For the test results, please refer to the attached figure 2 shown. It can be seen from the figure that, compared with common polysilicon wafers, the reflectivity of the silicon wafers in this embodiment is lower in each wavelength band.

Embodiment 3

[0027] Mix hydrofluoric acid with a concentration of 15 mol / liter, potassium permanganate with a concentration of 0.4 mol / liter, and modifier sodium nitrite with a concentration of 0.15 mol / liter. The p-type polysilicon chip is soaked in the mixed acid etching solution. The etching temperature is 30° C., and the etching time is 30 minutes. After the etching is completed, the polysilicon wafer is immersed in a NaOH solution with a mass fraction of 1% and cleaned for 30 seconds. After cleaning, dry it and conduct a reflectivity test. For the test results, please refer to the attached image 3 shown. It can be seen from the figure that, compared with common polysilicon wafers, the reflectivity of the silicon wafers in this embodiment is lower in each wavelength band.

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Abstract

The invention discloses a preparation method of the surface texture of a polycrystalline silicon solar cell. The surface texture of the polycrystalline silicon solar cell is prepared by an acid etching solution, the acid etching solution contains hydrofluoric acid, an oxidant and a modifier, wherein the concentration range of the hydrofluoric acid is from 13moles / litre to 17moles / litre; the oxidant is a potassium permanganate solution, and the concentration range of the oxidant is from 0.01moles / litre to 0.5moles / litre; the modifier is sodium nitrite, and the concentration range of the modifier is from 0.05moles / litre to 0.2moles / litre; the etching temperature is 10-30 DEG C, and the etching time is 10-45 minutes. The invention reduces the reflectivity of the polycrystalline silicon solar cell and has little environmental pollution.

Description

technical field [0001] The invention belongs to the field of preparing solar cells, in particular to a method for surface texture of polycrystalline silicon solar cells. Background technique [0002] In today's world, the continuous use of conventional energy has brought about a series of economic and social problems such as energy shortage and environmental degradation, and the development of solar cells is one of the ways to solve the above problems. High conversion efficiency and low cost are the main trends in the development of solar cells and the goals pursued by technology researchers. [0003] In order to improve the conversion efficiency of the battery, it is necessary to reduce the light reflection of the surface and increase the effective absorption of light. In the prior art, surface texture and anti-reflection film deposition are two main methods to reduce the surface reflectance of solar cells. The so-called surface texture of the solar cell refers to the reg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/24H01L31/18
Inventor 王立建王栩生章灵军
Owner CSI CELLS CO LTD
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