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Multi-cell connected high-power photoelectric device with function of preventing single-cell thermoelectric damage

A photoelectric device, high-power technology, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of uneven temperature distribution, reliability decline, uneven distribution, etc., to avoid hot spots or thermal collapse, Suppression of thermoelectric positive feedback effect, comprehensive effect of thermal reliability improvement

Inactive Publication Date: 2010-02-10
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The junction temperature of high-power devices is usually unevenly distributed in the chip, and the temperature in some areas is higher, and the current is larger. In the case of over-excitation, the current is seriously concentrated in these areas with higher temperature. Due to the thermoelectric positive feedback As a result, the temperature further increases and becomes a hot spot. When the temperature exceeds the junction temperature that can be tolerated, the place will be burned (thermal collapse), which will lead to the failure of the entire chip.
The larger the device chip area, the more uneven the temperature distribution, the greater the probability of hot spots, and the lower the reliability

Method used

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  • Multi-cell connected high-power photoelectric device with function of preventing single-cell thermoelectric damage
  • Multi-cell connected high-power photoelectric device with function of preventing single-cell thermoelectric damage
  • Multi-cell connected high-power photoelectric device with function of preventing single-cell thermoelectric damage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as Figure 2a The plane structure diagram of an ordinary front-emitting LED chip connected in series with ballast resistors connected in parallel is shown in the figure: the whole LED chip is composed of unit cell 1, ballast resistor 2, cathode lead 3, cathode pressure solder block 5, anode lead 4 and anode Composed of pressure welding blocks 6, wherein the cathode pressure welding block 5 and the anode pressure welding block 6 constitute the chip general lead-out electrode of the optoelectronic device. Each unit cell 1 is connected to the cathode welding block 5 through the cathode lead 3, and a ballast resistor 2 is connected in series on the anode lead 4 between the unit cell 1 and the anode welding block 6, and then connected to the anode welding block 6 . and Figure 2b Shown is a cross-section of a unit cell and its lead connection in a common front-emitting LED chip in which ballast resistors are connected in series and connected in parallel. The unit cel...

Embodiment 2

[0032] Such as Figure 3a As shown in the plane structure diagram of a vertical LED chip connected in series with ballast resistors in parallel: the whole LED chip consists of a unit cell active area 21, a ballast resistor 22, a cathode lead 23, a cathode solder block 24, and a conductive lining from the back. The composition of the anode drawn from the bottom. A ballast resistor 22 is connected in series on the cathode lead 23 between the unit cell active area 21 and the cathode welding block 24, and the unit cell active area 21, the ballast resistor 22 and the cathode welding block 24 are formed by the cathode lead 23 series access. and Figure 3b Shown is a cross-sectional structure of a unit cell and its lead connection in a vertical LED chip in which ballast resistors are connected in series and connected in parallel. The conductive substrate 20 is used for the anode extraction of the chip, the unit cell active region 21 is located on one side of the conductive substra...

Embodiment 3

[0034] The multi-cell parallel design with ballast resistors connected in series can also be applied to LED chips with a flip-chip structure, and its connection methods are also diverse.

[0035] One of the connection methods is to design the ballast resistor on the same side as the active area of ​​the LED chip. Such as Figure 4a As shown: the chip is composed of epitaxial substrate 30, active region 31, cathode lead-out region 32, insulating medium 33, cathode leads 341 and 342, anode bump 361 and cathode bump 371, while the transfer substrate is composed of anode bump 362, The cathode bump 372 , the anode lead 381 , the cathode lead 382 and the insulating substrate 39 are composed. The active chip and the transfer substrate are combined by a flip-chip welding process, the anode bump 361 is connected to the anode bump 362 , and the cathode bump 371 is connected to the cathode bump 372 . The current flows from the anode lead 381 to the active region through the anode bump ...

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Abstract

The invention discloses a multi-cell connected high-power photoelectric device with a function of preventing single-cell thermoelectric damage and relates to the field of semiconductor optoelectronics. A chip of the photoelectric device is divided into two or more small-area single cells, and an anode lead and a cathode lead of each single cell are connected with a main extraction electrode with corresponding polarity. The multi-cell connected high-power photoelectric device is characterized in that a ballasting resistor for inhibiting thermoelectric positive feedback and limiting an overlargecurrent difference among different single cells is at least connected in series to an electrode lead between each single cell and the main extraction electrode. The thermoelectric positive feedback effect caused by uneven temperature rise of all the single cells in the photoelectric device can be effectively inhibited in such a way that at least one ballasting resistor is integrated in the photoelectric device in a series connecting way, thereby preventing the single cells with higher temperature from generating a phenomenon of hot spots or hot collapsing and improving the thermal reliabilityof the photoelectric device.

Description

technical field [0001] The invention relates to a structure of a semiconductor optoelectronic device, in particular to a chip structure for improving the thermal reliability of a high-power optoelectronic device, and belongs to the field of semiconductor optoelectronic technology. Background technique [0002] Optoelectronic devices refer to a type of device that converts light energy and electrical energy into each other. There are many types, such as: light emitting diode (LED), solar cell, photodetector, laser (LD) and so on. Among them, LED is the most widely used optoelectronic device in daily life. In recent years, with the continuous maturity of gallium nitride-based blue light, green light and ultraviolet light LED technology, the luminous efficiency has been continuously improved, and the application value of LED has been paid more and more attention. As a light source, LED has many advantages, which are highlighted in: high luminous efficiency (the latest researc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/075H01S3/23H01L23/62H01L23/48
CPCH01L24/24H01L2224/14H01L2224/24H01L2924/00012
Inventor 蔡勇
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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