The invention relates to a memory and a storage array thereof, an access control method, and an access control circuit. The storage array comprises a plurality of byte units, a plurality of bit lines, control grid lines and word lines, wherein control grids of first storage bits and second storage bits of various storage units in the same byte unit share the one control grid line, and middle electrodes in the same row of the storage units share the one word line. The storage array access control method comprises performing the following steps to erase data in various storage units of the target byte, wherein the steps comprise: loading a first control voltage on the control grid lines connected with various storage units in the target byte unit, and loading a second control voltage on other control grid lines, wherein the first control voltage is less than zero potential, and the second control voltage is higher than zero potential; and respectively setting the two bit lines connected with various storage units in the target byte unit as zero, and loading a first bit line voltage on other bit lines. With the technical scheme, separation distances between various byte units of the memory can be reduced.