Method for reinforcing transconductance of AlGaN/GaN transistor with high electron mobility by dielectric material

A high electron mobility, dielectric material technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as transistor performance degradation, charge defects, electrical performance degradation, etc., to achieve improved transconductance, low cost, and simple operation. Effect

Inactive Publication Date: 2011-08-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the method of increasing the output power of AlGaN / GaN high electron mobility transistors by increasing their transconductance is mainly to attach inorganic dielectric materials between the source and gate, drain and gate of AlGaN / GaN high electron mobility crystals. thin films, and these films are mostly oxide films, such as Al 2 o 3 , HfO 2 , PZT, etc. There are many problems in their compatible growth with semiconductors, and their growth usually needs to be carried out at high temperature and high oxygen partial pressure. Under such preparation conditions, the performance of transistors will be seriously degraded, resulting in electrical performance degradation. For example, Igor Stolichnov et al. grew PZT thin films on AlGaN / GaN by magnetron sputtering, and found that PZT / AlGaN interface diffusion at high temperature produces charge defects, which leads to the degradation of the electrical properties of 2DEG, etc.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0007] The method of enhancing the transconductance of AlGaN / GaN-HEMT by using dimethyl sulfoxide (DMSO) dielectric material:

[0008] Step 1: Dropping the liquid medium DMSO between the source and the gate and between the drain and the gate to finally obtain a dielectrically enhanced AlGaN / GaN-HEMT. Its transconductance enhancement ratio is shown in Table 1.

Embodiment 2

[0010] The method of enhancing the transconductance of AlGaN / GaN-HEMT by using N,N-dimethylformamide (DMF) dielectric material:

[0011] Step 1: Add liquid medium DMF dropwise between the source and the gate and between the drain and the gate to finally obtain a dielectrically enhanced AlGaN / GaN-HEMT.

Embodiment 3

[0013] The method of enhancing the transconductance of AlGaN / GaN-HEMT by using ethanol dielectric material:

[0014] Step 1: Dropping liquid medium ethanol between the source and the gate and between the drain and the gate to finally obtain a dielectrically enhanced AlGaN / GaN-HEMT.

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Abstract

The invention provides a method for reinforcing the transconductance of an AlGaN / GaN transistor with high electron mobility by a dielectric material. A high-K organic dielectric material is filled between a source electrode and a grid electrode of the AlGaN / GaN transistor with high electron mobility and between a drain electrode and the grid electrode of the AlGaN / GaN transistor with high electron mobility, wherein the high-K organic dielectric material is one of a liquid organic material, a high-K solid organic material, a high-K organic composite material and a high-K organic / inorganic composite material with the dielectric constant greater than 2. The high-K organic dielectric material can be in a liquid state and can also be in a solid state. The method can greatly reinforce the transconductance of the AlGaN / GaN transistor with high electron mobility, and the reinforcement of the transconductance can reach 70% under a situation that the threshold voltage is basically equivalent. The invention is mainly used for the AlGaN / GaN transistor with high electron mobility.

Description

technical field [0001] The invention relates to a method for enhancing the transconductance of a transistor, in particular to a method for enhancing the transconductance of an AlGaN / GaN high electron mobility transistor with a dielectric material. Background technique [0002] The transconductance of AlGaN / GaN high electron mobility transistor (HEMT) will directly affect its sensitivity. Improving the transconductance of HEMT devices and then improving the sensitivity of HEMTs has important scientific significance and practical engineering application value. As a typical representative of the third-generation semiconductor, GaN has high electron saturation drift velocity, high breakdown voltage, and high chemical and thermal stability. At present, the method of increasing the output power of AlGaN / GaN high electron mobility transistors by increasing their transconductance is mainly to attach inorganic dielectric materials between the source and gate, drain and gate of AlGaN...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L21/335H01L29/778H01L21/288
Inventor李言荣陈远富王泽高刘兴钊
OwnerUNIV OF ELECTRONICS SCI & TECH OF CHINA