Method for manufacturing silicon photoelectric diode

A technology of silicon photodiodes and manufacturing methods, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of unfavorable photoelectric measurement integration and miniaturization, increase device cost and installation complexity, and achieve reliability High, good repeatability and stability, simple process effect

Inactive Publication Date: 2010-05-26
DALIAN UNIV OF TECH
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Problems solved by technology

If the above-mentioned silicon photodetectors based on bulk silicon are used, people need to increase the blue-violet filter to achieve the above goals, which will increase the c

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  • Method for manufacturing silicon photoelectric diode
  • Method for manufacturing silicon photoelectric diode
  • Method for manufacturing silicon photoelectric diode

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[0024] The specific implementation of the present invention will be described below with reference to the drawings and technical solutions.

[0025] First, a suitable silicon-on-insulator wafer is selected as the substrate, and the key is to select the device layer 3 with an appropriate thickness. According to the Lambert-Beer theorem, the optical power decays exponentially with the increase of the incident depth in silicon. The attenuation index is the absorption coefficient of the silicon material corresponding to the wavelength. The absorption coefficient of the silicon material increases significantly with the decrease of the wavelength, resulting in blue Violet light is mainly absorbed in a thin layer close to the surface of the silicon wafer, while long-wave light and near-infrared light in visible light, that is, the wavelength range of 500 to 1000 nanometers, can travel deep distances in silicon. We select a silicon-on-insulator wafer as the substrate. The thickness of th...

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Abstract

The invention provides a method for manufacturing a silicon photoelectric diode, which belongs to the field of manufacturing semiconductor devices. The invention particularly relates to the method for manufacturing the silicon photoelectric diode. The method comprises the following steps of: adopting an insulator upper silicon wafer as a substrate, wherein the insulator upper silicon wafer comprises a support silicon chip, a silicon dioxide buried layer and a device layer; processing an isolated groove of a closed ring first on the device layer by adopting a dry etching process; growing a silicon dioxide layer with a certain thickness on the upper surface of the device layer of the insulator upper silicon wafer; performing ion implantation doping on the device layer by penetrating the silicon dioxide layer to obtain a P type doped region and an N type doped region; and growing a titanium metal layer and an aluminum metal layer with certain thicknesses on the upper surface of the device layer successively by adopting a sputtering method, and performing photoetching to form a positive electrode and a negative electrode to finally obtain a silicon photoelectric diode structure. The method for manufacturing the silicon photoelectric diode has the advantages of simple process, high reliability, good repeatability and stability, and can be integrated with other devices.

Description

technical field [0001] The invention belongs to the field of manufacturing semiconductor devices, in particular to a method for manufacturing a silicon photodiode. Background technique [0002] Traditional silicon photodiodes have the characteristics of high sensitivity, good reliability, low price and mature technology, and are widely used in civil and military fields. The Chinese invention patent jointly applied by Pan Yinsong and others, the application number is CN 101090138A, discloses a kind of P + PIN silicon photodetector, the photodetector thins the P of the high-concentration doped layer by double diffusion doping of concentrated boron and light boron + The dead layer in the type semiconductor improves the spectral responsivity of the photodetector. The photodetector uses bulk silicon as the substrate, and the device layer is relatively thick, which is suitable for photoelectric measurement in a wide spectral range, such as from the near ultraviolet to the near i...

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 褚金奎韩志涛孟凡涛王志文
Owner DALIAN UNIV OF TECH
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