Zinc oxide crystals and preparation method thereof

A technology of zinc oxide and crystal, which is applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems that it is not easy to obtain large +c slices, and the area of ​​+c slices is small, and achieve low cost, good crystal quality, and fast growth speed Effect

Inactive Publication Date: 2010-06-09
CHINA NONFERROUS METAL (GUILIN) GEOLOGY & MINING CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes: ①It is not easy to obtain crystals with large +c slices; ②The availa

Method used

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  • Zinc oxide crystals and preparation method thereof
  • Zinc oxide crystals and preparation method thereof
  • Zinc oxide crystals and preparation method thereof

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Embodiment Construction

[0022] The specific embodiment of the present invention will be described below by taking the hydrothermal method as an example.

[0023] This embodiment uses image 3 The growth device shown is composed of an autoclave and a matching temperature difference well-type resistance furnace. The autoclave body 5 is provided with a gold bushing tube 6. In this embodiment, the inner cavity size of the gold bushing tube 6 is Φ38mm×750mm, tube wall thickness 0.8mm.

[0024] Sc: ZnO crystal is synthesized by hydrothermal method, the inner cavity of gold bushing tube 6 has a mixed solution of mineralizer and H2O, and the raw material of ceramic body made of unsintered ZnO powder and containing Sc 2 o 3 The compost 8 of composition is positioned at the bottom (that is, in the dissolving zone) of the gold liner tube 6 lumens, and the baffle plate 7 with holes is arranged on the compost 8 top, and the baffle plate 7 separates the gold liner tube 6 into the dissolution zone 9 and Growth z...

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Abstract

The invention relates to scandium-doped zinc oxide (Sc:ZnO) crystals and a preparation method thereof. In the invention, a small amount of scandium (Sc) is added in the preparation of ZnO to effectively improve the growing speed of an m plane and make quick growing of large-size ZnO crystals possible; the shapes of the crystals are reasonably changed to improve the growing efficiency of the crystals; usually, the ZnO crystals grow in hexagonal pyramid shapes, but after being doped with the scandium, the crystals grow in hexagonal prism shapes while keeping the +c slice area available above a +c region constant; and after scandium doping, the phenomenon that twin crystals are likely to develop in the growing process of the ZnO crystals and other phenomena are improved. Compared with the prior art, the grown Zinc oxide single crystals have the characteristics of high growing speed (particularly on the m plane), high growing efficiency, high crystal quality and the like. The method has high repeatability and low cost and is applicable to batch production.

Description

(1) Technical field: [0001] The invention relates to a crystal material, specifically a zinc oxide crystal, which is an important substrate material for making zinc oxide, gallium nitride and other light-emitting electronic devices. The invention also relates to a method for preparing zinc oxide crystals. (two) background technology: [0002] In recent years, zinc oxide (ZnO) crystals have attracted great attention as a wide bandgap semiconductor material. A number of research groups have reported the P-type doping based on ZnO, the electroluminescence of ZnO-based LED and the ultraviolet detector based on ZnO. Due to the large exciton binding energy of ZnO, low pumping threshold at room temperature, wide tunable bandwidth, and easy cleavage (compared to α-Al 2 o 3 etc.) and other excellent properties, ZnO is expected to be used in ultraviolet, blue LD and LED, heteroepitaxial and homoepitaxial PN junctions, high peak energy energy limiters, large diameter and high qualit...

Claims

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Application Information

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IPC IPC(8): C01G9/02
Inventor 张昌龙左艳彬周卫宁吕智霍汉德卢福华覃世杰张海霞李东平何小玲
Owner CHINA NONFERROUS METAL (GUILIN) GEOLOGY & MINING CO LTD
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