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Method for controlling X-ray exposing clearance

A technology of exposure gap and control method, which is applied in the field of exposure technology, can solve the problems that the parallelism between the mask and photoresist is difficult to ensure, and the X-ray gap is difficult to control, so as to reduce the exposure problem, solve the parallelism, and protect the mask. Effect

Inactive Publication Date: 2011-05-04
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is: to overcome the deficiencies of the prior art, to provide a method for controlling the gap in X-ray exposure, to solve the problems that the gap is difficult to control in X-ray exposure, and the parallelism between the mask and the photoresist is difficult to ensure, and at the same time realize the mask protection

Method used

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  • Method for controlling X-ray exposing clearance
  • Method for controlling X-ray exposing clearance
  • Method for controlling X-ray exposing clearance

Examples

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Effect test

example 1

[0024] Control of example 1.1 μm gap (polymer material, etching process)

[0025] (1) Fabrication of 1 μm steps

[0026] Take a piece of silicon nitride mask (7.5mm×7.5mm silicon nitride wafer, 3mm×3mm film window), place it on the glue spinner, drop the polymer solution PMMA 950, spin coating at 500 rpm Coating for 10 seconds, spin coating for 30 seconds at 2000 rpm, then place the silicon nitride mask coated with PMMA on a hot stage at 180 degrees, bake for 90 seconds, and dry the solvent in PMMA to obtain the thickness PMMA of about 1 μm; expose the 3mm×3mm window of the silicon nitride mask, and protect other places, etch with a reactive ion etching machine, with an etching power of 35 watts and an oxygen flow rate of 30 liters / min. 3min, PMMA is removed, and a polymer step with a thickness of about 1 μm is obtained in the non-window area of ​​the mask;

[0027] (2) Place the sample coated with photoresist on the fixture, with the photoresist facing up; then place the st...

example 210

[0030] Example 2.10μm gap control (photoresist material, exposure process)

[0031] (1) Fabrication of 10μm steps

[0032]Take a piece of silicon nitride mask (7.5mm×7.5mm silicon nitride wafer, 3mm×3mm thin film window), put it on the adhesive machine, drop the photoresist solution AZ9260, and spin coat at 500 rpm Coating for 10 seconds, spin coating at 1500 rpm for 30 seconds, then place the silicon nitride mask coated with AZ9260 on a hot stage at 100 degrees, bake for 10 minutes, and dry the solvent in AZ9260 to obtain the thickness AZ9260 photoresist layer of about 10 μm; use a photomask with a window size of 3mm×3mm or larger to perform UV exposure on the silicon nitride mask, use g-line exposure for 90 seconds, and then develop with 6‰ NaOH for 3 minutes , rinse with deionized water for 1 minute, remove the photoresist of the window, and obtain a photoresist step with a thickness of about 10 μm in the non-window area of ​​the mask;

[0033] (2) Place the sample coated...

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Abstract

The invention discloses a method for controlling an X-ray exposing clearance. In the method, steps are made in a non-window area of an X-ray mask. The process for making the steps comprises: firstly, coating photoresist or other polymers of required thickness on the mask by using a spin coating process; secondly, making steps of required height on the mask by using a photoetching or etching process; thirdly, placing a sample coated with the photoresist on a clamp, making the photoresist on the sample face upward, placing the stepped mask on the sample and making the patterned side of the maskopposite to the side with the photoresist; and finally, judging the parallelism between the mask and the sample on the basis of an equal thickness interference principle and adjusting the parallelismbetween the mask and the sample by using the clamp. The method solves the problems of difficult X-ray exposing clearance control and unguaranteed parallelism between the mask and the photoresist, andrealizes effective protection of the mask.

Description

technical field [0001] The invention relates to an exposure process in micro-nano processing, in particular to a gap control method in an X-ray exposure process in which a thin film is used as a mask. Background technique [0002] The exposure process is a key process in micro-nano processing, and the precision of micro-nano processing depends on the exposure process. Proximity exposure is mostly used in the exposure process, that is, a certain gap is maintained between the mask and the photoresist surface during the exposure process. Due to the diffraction of light, this gap affects the quality of optical imaging. For the same mask, different gaps will result in different pattern transfer accuracy, so gap control technology is a crucial process link in the exposure process. [0003] The X-ray exposure process uses X-rays as the light source. Since X-rays have the characteristics of short wavelength and large penetration depth, they are very suitable for making nanostructu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F7/16
Inventor 刘刚熊瑛周杰张晓波田扬超
Owner UNIV OF SCI & TECH OF CHINA
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