Nanometer composite phase-change material, preparation method and optimization method

Abstract

The invention provides a nanometer composite phase-change material, wherein Si element is added into a phase-change material, so that the phase-change material with the reversible phase-change capability is evenly divided into regions with manometer sizes by non-crystalline Si element to form into a binary nanometer composite structure. Furthermore, the invention further provides a method which takes the nanometer composite phase-change material and the optimized nanometer composite phase-change material as the material of a phase-change memorizer. On the one hand, the nanometer structure which is formed by the Si element can improve the crystallizing temperature of the phase-change material, thereby correspondingly improving the retentiveness of date and being good for being intergraded with the CMOS technology; on the other hand, the nanometer structure limits the activity range of the phase-change material in the reversible phase-change process, is good for restraining the component segregation of the phase-change material, and improves the stability of the phase-change material, thereby improving the performance of the phase-change memorizer; and the adding of the Si element can improve the adhesion of the phase-change material and increase the machinability.

Description

technical field [0001] The invention relates to a nanocomposite phase change material, a preparation method and a preferred method thereof. Background technique [0002] The research of phase change memory is the hotspot of memory research at present. The phase change memory with relatively clear application prospects can be roughly divided into two categories, one is the commercialized multimedia data disc (DVD), and the other is the sulfur It is a compound random access memory (C-RAM, Chalcogenide random access memory). The former uses the change in reflectivity between amorphous and polycrystalline materials before and after the phase change to store data "0" and "1", while the latter stores data based on the difference in resistivity before and after the phase change. In a chalcogenide RAM, one state (ie, the polycrystalline state) has a lower resistivity and the other state (ie, the amorphous state) has a higher resistivity. A logical "1" or a logical "0" depends on w...

AI Technical Summary

Problems solved by technology

[0004] At present, the phase change material used in PCRAM is mainly Ge 2 Sb 2 Te 5 , although this material has been widely used in rewritable phase-change optical discs, however, Ge 2 Sb 2 Te 5 Whether it is the best material system and composition for phase change memory requires a lot of experiments and data accumulation

At present, there are three main problems encountered in the manufacturing process of phase change memory: (1) The stability of the device needs to be improved, mainly Ge 2 Sb 2 Te 5 The stability of the material is not good, and the temperature treatment during repeated operation or processing will change the composition of the material; (2) The data retention is not good, mainly because the crystallization temperature of the material is low, and the amorphous state is easy to become polycrystalline state; (3) Ge 2 Sb 2 Te 5 Poor bonding with dielectric materials and electrode materials leads to problems in polishing or etching, affecting device reliability