Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing mesoporous silicon carbide material at low temperature

A technology of mesoporous silicon carbide and mesoporous silicon dioxide, which is applied in the field of low-temperature preparation of mesoporous silicon carbide materials, can solve the problems of destroying the structure of SiC materials, difficulty of SiC materials, and unfavorable practical applications.

Inactive Publication Date: 2012-08-29
SHANGHAI UNIV
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A common feature of these synthesis methods is that high temperature reactions are required, which undoubtedly increases the preparation cost and is very unfavorable for the practical application of the material in industry.
On the other hand, the high temperature process will destroy the structure of SiC materials, so it is very difficult to obtain SiC materials with large specific surface area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing mesoporous silicon carbide material at low temperature
  • Method for preparing mesoporous silicon carbide material at low temperature
  • Method for preparing mesoporous silicon carbide material at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: concrete steps are as follows:

[0017] 1. Mesoporous silica SBA-15, sucrose, H 2 SO 4 and deionized water in a mass ratio of 1:0.71:0.14:3, treated at 100°C for 6 hours, then at 160°C for 6 hours, and then carbonized at 700°C for 6 hours under nitrogen protection to obtain C / SBA-15.

[0018] 2. Mix Mg powder and C / SBA-15 in a mass ratio of 1:2, put them into a stainless steel crucible, and react at 650°C for 6 hours under nitrogen protection.

[0019] 3. The resulting product was washed in 10% HF aqueous solution for 5 hours, and finally in 4M HNO 3 in aqueous solution, washed for 6 hours, filtered, washed and dried to obtain mesoporous SiC powder.

[0020] See attached picture, figure 1 The XRD spectrum of the SiC mesoporous material prepared in Example 1 of the present invention is given in . The XRD analysis was carried out on a RigaKu D / max-2550 X-ray diffractometer in Japan; CuKα diffraction was used, and the scanning range was 2θ=10-90°. fro...

Embodiment 2

[0023] Example 2: The implementation process is the same as Example 1 except for the following differences: Mesoporous silica KIT-6, sucrose, H 2 SO 4 and deionized water in a mass ratio of 1:0.71:0.14:3, treated at 100°C for 6 hours, then at 160°C for 6 hours, and then carbonized at 700°C for 6 hours under nitrogen protection to obtain C / KIT-6.

[0024] See attached picture, figure 1 The XRD spectrum of the SiC mesoporous material prepared in Example 2 of the present invention is given in . from figure 1 It can be seen that the XRD pattern of SiC prepared with KIT-6 as a template is basically consistent with that of Example 1 (with SBA-15 as a template).

[0025] See attached picture, figure 2 (b) is a TEM photograph of the SiC mesoporous material obtained in Example 2. It can be seen from the TEM photo that the SiC prepared in Example 2 has an obvious mesoporous structure.

[0026] See attached picture, image 3 (b) is the infrared spectrum of the SiC mesoporous ma...

Embodiment 3

[0027] Example 3: The implementation process is the same as Example 1 except for the following differences: mesoporous silica SBA-15, sucrose, H 2 SO 4 and deionized water in a mass ratio of 1:0.71:0.14:3, treated at 100°C for 6 hours, then at 160°C for 6 hours, and then carbonized at 500°C for 6 hours under the protection of nitrogen to obtain C / SBA-15.

[0028] The XRD peaks of the prepared SiC sample are similar to those of Example 1, but the intensity is slightly lower; the TEM and infrared spectra are basically the same as those of Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
specific surface areaaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing a mesoporous silicon carbide (SiC) material at a low temperature, which belongs to the technical field of inorganic chemistry and material synthesis. The method of the invention comprises the following steps of: mixing a certain amount of mesoporous silicon dioxide SBA-15 or KIT-6, sucrose, H2SO4 and deionized water; carbonizing the sucrose at the temperature of between 500 and 750 DEG C to prepare a compound of which the mesoporous silicon dioxide is filled with carbon, wherein the compound is called as C / SBA-15 or C / KIT-6; mixing Mg powder andthe C / SBA-15 or C / KIT-6 in a mass ratio of 1:2; reacting for 6 hours at the temperature of between 500 and 700 DEG C and under the protection of nitrogen; washing a reaction product with HF aqueous solution and HNO3 aqueous solution; and filtering and drying the washed reaction product to obtain the mesoporous SiC material.

Description

technical field [0001] The invention relates to a method for preparing a mesoporous silicon carbide material at low temperature, and belongs to the technical field of inorganic chemistry and material synthesis. Background technique [0002] Silicon carbide (SiC), also known as corundum or refractory sand, is widely used in many fields due to its high hardness, stable chemical properties, high thermal conductivity, small thermal expansion coefficient, and good wear resistance. , such as functional ceramics, advanced refractories, abrasives and metallurgical raw materials. With the development of science and technology, research on the application of silicon carbide materials in other fields has also attracted increasing attention. For example, a light-emitting diode that can emit blue light can be prepared by using its large forbidden band width; it can be prepared by using its high temperature resistance. Catalyst carrier materials that can resist high temperatures; even se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36
Inventor 张海娇赵兵陶海华宋劲松张国华焦正
Owner SHANGHAI UNIV