TFT-LCD ( Thin Film Transistor-Liquid Crystal Diode) array substrate and manufacture method thereof

Abstract

The invention relates to a TFT-LCD (Thin Film Transistor-Liquid Crystal Diode) array substrate and a manufacture method thereof. The array substrate comprises a grid line and a data line, wherein a pixel electrode and a thin film transistor (TFT) are formed in a pixel area limited by the grid and data lines; the pixel electrode is directly connected with the drain of the TFT, and the shape of the pixel electrode is matched with that of the semiconductor layer. The manufacture comprises the following steps of: deposing the source / drain metal thin films and the doped semiconductor thin film to form a pattern comprising the source electrode and drain; deposing the semiconductor thin film and the transparent conductive thin film to form a pattern comprising the semiconductor layer and the pixel electrode; and deposing the grid insulation layer and the grid metal thin film to form a pattern comprising the grid line, the grid and the interface through hole. According to the invention, the manufacture of the TFT-LCD array substrate can be realized through three processes, so that the process step is simplified, the process time is shortened and the production cost is reduced.

Description

technical field [0001] The invention relates to a liquid crystal display and a manufacturing method thereof, in particular to a TFT-LCD array substrate and a manufacturing method thereof. Background technique [0002] At present, the manufacture of thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT-LCD for short) array substrate is completed through a group of patterning processes to form structural graphics. One patterning process forms a layer of structural graphics, and the number of patterning processes can be measured. Due to the complexity of the TFT-LCD array substrate, reducing the number of patterning processes means reducing the manufacturing cost. The five patterning processes in current technology include: gate line and gate electrode patterning, active layer patterning, source electrode / drain electrode patterning, via hole patterning, and pixel electrode patterning. Each patterning process includes thin film deposition ...

AI Technical Summary

Problems solved by technology

[0004] Since each patterning process needs to transfer the pattern of the mask plate to the film pattern, and each layer of film pattern needs to be accurately covered on another layer of film pattern, the prior art five patterning processes and four patterning processes There are still defects such as complex process, long production cycle and large number of masks used. At the same time, a long process cycle increases the incidence of defects, resulting in a decrease in the yield rate and an increase in cost.

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