Manufacturing method of subminiature MEMS gyroscope sensor

A manufacturing method and gyroscope technology, applied in chemical instruments and methods, instruments, manufacturing microstructure devices, etc., can solve problems such as no breakthrough technology, and achieve the effect of saving area, less equipment investment, and low cost

Inactive Publication Date: 2010-09-29
SENODIA TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in order to reduce the size of the device as much as possible to reduce the cost, or to improve the performance of

Method used

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  • Manufacturing method of subminiature MEMS gyroscope sensor
  • Manufacturing method of subminiature MEMS gyroscope sensor
  • Manufacturing method of subminiature MEMS gyroscope sensor

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Embodiment Construction

[0031] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0032] The manufacturing method of the ultra-small MEMS gyroscope sensor involved in the present invention is to embed a metal with a density higher than that of silicon in the silicon chip by etching and electroplating on the silicon chip / wafer, and then bond it to the silicon or glass substrate , and finally release the movable structure according to the normal silicon micromachining method, wherein the ultra-small MEMS gyroscope sensor is a MEMS inertial sensor, and its manufacturing method specifically includes the following steps:

[0033] A1, such as figure 1 As shown, the deposition step is first: a MEMS wafer 1 is provided, and both sides of the silicon substrate are polished, or a wafer polished on both sides is directly purchased as the material of the MEMS wafer 1 . Growth or...

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Abstract

The invention discloses a manufacturing method of a subminiature MEMS gyroscope sensor, which comprises the following steps: providing MEMS wafer, depositing silicon dioxide through a CVD process, and then depositing silicon nitride through the CVD process; etching the patterns of silicon dioxide and silicon nitride on the front surface of the wafer, etching the wafer through using a RIE process, and forming a spring area and a metal landfill area in an MEMS structure; sputtering a metal layer on the front surface of the wafer to be as a seed layer, exposing the landfill area after photoetching, filling metal the density of which is more than that of silicon at the metal landfill area; removing photosensitive resist on the front surface of the MEMS wafer, removing the seed layer of the rest positions of the surface of the wafer; preparing sheet glass two sides of which are polished, corroding a groove on the glass by using a dry method to form a gap between a mass block and a glass cavity on the wafer; and sputtering metal on the back of the wafer, forming electrode after photoetching, and finally removing the photosensitive resist. The invention reduces the dimension of the mass block or increases the mass of the mass block.

Description

Technical field [0001] The present invention relates to a micro-electro-mechanical system (Micro-Electro-Mechanical System, MEMS for short) processing technology, and in particular to a manufacturing method of an ultra-small MEMS gyroscope sensor. Background technique [0002] Microelectromechanical systems (MEMS) are technologies for designing, processing, manufacturing, measuring, and controlling micro / nano materials. It can integrate mechanical components, optical systems, drive components, and electronic control systems into a microsystem as an integral unit. It uses a manufacturing process that combines microelectronics technology and micromachining technology to produce a variety of sensors, actuators, drives and microsystems with excellent performance, low price, and miniaturization. Micromachining technology includes silicon body micromachining, silicon Technologies such as surface micromachining, LIGA (LIGA is the German word Lithographie, Galanoformung and Abformun...

Claims

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Application Information

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IPC IPC(8): B81C1/00B81B7/02B81C5/00G01P15/097
Inventor 邹波华亚平李莉
Owner SENODIA TECH (SHANGHAI) CO LTD
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