50results about How to "Reduce area size" patented technology

The invention discloses a SiC-bipolar junction transistor (SiC-BJT) device for a power integrated circuit and a manufacturing method of the SiC-BJT device and mainly aims to solve the problem that a traditional SiC-BJT cannot be used for the power integrated circuit. The SiC-BJT disclosed by the invention comprises an SiC substrate (1), a p-type buffer layer (2), an n-type collector region (3), a p-type base region (4), an n-type emitter region (5) and a passivation layer (6) which are arranged from bottom to top. P-type ohmic contacts (7) are respectively located at both sides of the p-type base region (4); n-type ohmic contacts (8) are respectively located at both sides of the n-type emitter region (5); an emitting electrode (9A) is located on the n-type emitter region (5); base electrodes (9B) are respectively located on the p-type ohmic contacts (7); collector electrodes (9C) are respectively located on the n-type ohmic contacts (8); protection rings (10) which are 0.2-0.6mum long are arranged at the position of the interface of the n-type collector region (3) and the p-type base region (4); and field plates (11) which are 0.5-1mum long are arranged on the base electrodes (9B). The SiC-BJT device for the power integrated circuit has the advantages of small size, easiness in integration and high breakdown voltage and can be used for preparing the power integrated circuit.

The invention discloses a hybrid capture kit for detecting mutation of breast cancer susceptibility genes BRCA1 and BRCA2. The hybrid capture kit comprises a hybridization reagent, a PCR amplification reagent and an enrichment degree detection reagent, wherein the hybridization reagent comprises probe mixtures from SEQ NO.1 to SEQ NO. 173, and the mole ratio is SEQ NO.1: SEQ NO. (2-172): SEQ NO. 173=1: 1: 1. During detection, the use amount of each of the probe mixtures with the concentration of 2nM is 1 [mu]l. The kit disclosed by the invention can be used for high-sensitivity, high-flux, low-cost and easy-operation full-explicit mutation detection for the genes BRCA1 and BRCA2, and can assist a clinical doctor in screening out individuals with the breast cancer susceptibility risk to fulfill the aim of preventing occurrence of breast cancers.

The invention discloses a light source system and a projection device. The light source system comprises a first light source, a wavelength conversion device, a driving device, a second light source and a control device, wherein the first light source emits first laser light; the wavelength conversion device comprises three primary-color light areas and a mixed-color light area; the driving devicedrives the wavelength conversion device to move so as to enable the areas of the wavelength conversion device to periodically receive the first laser light according to a time sequence; the second light source emits complementary light, and the complementary light is consistent with light emitted by one primary-color light area in color; the control device controls on-off of the second light source, and the control device controls the second light source to be turned on within at least two of all time periods of the same-color primary-color light area for receiving the first laser light, alltime periods of the mixed-color light area for receiving the first laser light and partial time periods of the different-color primary-color light area for receiving the first laser light. The technical scheme of the invention can obtain a light source system which is high in luminous flux and high in supplementary light source utilization rate.

The invention discloses a touch control board, comprising a first substrate, a second substrate, a plurality of first electrodes, a first wiring, a second wiring and a conductive structure. The second substrate and the first substrate are oppositely arranged, and a first surface of the first substrate is facing a fourth surface of the second substrate. The first electrodes are arranged on the first surface of the first substrate and are at least partially positioned in a light transmitting area. The first wiring is arranged on the first surface of the first substrate and is at least partially positioned in a periphery area. The first wring is electrically connected with one of the plurality of the first electrodes. The second wiring is arranged on the fourth surface of the second substrate and is at least partially positioned in the periphery area. The second wiring is electrically connected with another of the plurality of first electrodes. The conductive structure is arranged between the first substrate and the second substrate. The second wiring is electrically connected with one of the plurality of first electrodes through the conductive structure. The wiring parts connected with the same electrode are arranged on another substrate, so that the size of the periphery area is reduced.

A semiconductor device for protecting a rechargeable cell at least from excessive discharge current due to over discharge of the rechargeable cell, includes (a) a first excessive discharge current detection circuit configured to detect first excess of a voltage at an externally or an internally provided electric current detection terminal exceeding a first voltage level (Vs3), (b) a second excessive discharge current detection circuit configured to detect second excess of the absolute voltage at the electric current detection terminal exceeding a second voltage level (Vs4) higher than the first voltage level, (c) a delay circuit configured to cause each of the first and second excessive discharge current detection circuits to delay its output by a predetermined delay time, and (d) a delay reducing circuit configured to produce a delay time reducing signal for reducing the delay time at a predetermined ratio when a negative voltage lower than a predetermined negative voltage level or a positive voltage higher than a third voltage level (Vt) is applied to the electric current detection terminal.

A color filter substrate includes: a first partition wall for partitioning a substrate into a plurality of color element regions; a second partition wall for dividing each of the plurality of color element regions into a plurality of regions; color elements having a plurality of types, being formed on the plurality of color element regions; a transparent electrode covering the first partition wall, the second partition wall, and the color element; and a projection or an aperture formed on the transparent electrode; wherein the second partition wall is arranged in the direction in which the projection or the aperture is extended.

The invention provides a semiconductor testing structure and a stress migration testing method. A first welding pad, a second welding pad ...and an N+2 welding pad are arranged in a wafer cutting line along the cutting line extending direction. A sub testing structure required by stress migration tests is arranged between each two adjacent welding pads except the first welding pad and the second welding pad. During a testing process, a one-direction electric conduction structure arranged between the first welding pad and the second welding pad and a one-direction electric conduction structure arranged between the first welding pad and the N+2 welding pad enable a) a first testing path between the first welding pad and an P welding pad via the N+2 welding pad... to be in conduction in an alternative manner and resistance of N+1-P sub testing structures in the paths is acquired by using a Kelvin four-wire method; or b) a second testing path between the first welding pad to a Q welding pad via the second welding pad... to be in conduction and the resistance of the remained P-1 sub testing structure is acquired by adopting the Kelvin four-wire method, wherein Q>(P+1). By adopting the above structure, the floor occupancy of the testing structure provided by the invention is reduced and the testing efficiency is improved.

The invention discloses a method for preparing an IPN structure PMMA-PU high-transparency composite board through ultrasonic assistance, and belongs to the field of composites. The method comprises the following steps that 1, raw materials (monomers, an initiator/catalyst, a cross-linking agent, a chain extender and the like) of polymethyl methacrylate (PMMA) and polyurethane (PU) are mechanically mixed to be uniform, and the materials are poured into a polytetrafluoroethylene mold after being subjected to vacuum degassing; 2, a sealing pressing head is placed on the mold to apply constant pressure; 3, the mold is placed in a temperature-adjustable low-frequency ultrasonic container, a sequential polymerization reaction is carried out under the action of ultrasonic waves, and the high-transparency interpenetrating polymer network (IPN) structure PMMA-PU composite board is prepared. The action of ultrasonic assistance is adopted, and the prepared IPN structure PMMA-PU composite board has the advantages of being low in microphase separation degree, high in transparency and the like and is expected to be applied to light bulletproof transparent materials.

A method for designing an integrated circuit die, the method including generating a first layout for the die which includes at least one decap; and performing a post-processing decap insertion operation to add at least one additional decap in excess of the at least one decap, the operation including: for at least a portion of the first layout, identifying at least some of whichever locations in at least the portion have positive slack, as “candidate” locations; and inserting at least one additional decap at at least one respective location from among the “candidate” locations.

The invention discloses a non-volatile static storage unit and a control method thereof, the storage unit comprises: a nonvolatile storage module, whereinthe nonvolatile storage module comprises a switch component and a ferroelectric memory, one end of the ferroelectric memory is connected with the switch component, and the other end of the ferroelectric memory is connected with a control line; and a static storage module, wherein a storage node of the static storage module is connected with the ferroelectric memory through the switch component; before the static storage module is powered off,the switch component is switched on, and pulse voltage is input through the control line to store data of the storage node into the ferroelectric memory; and after the static storage module is powered on, the switch component is switched on, pulse voltage is input through the control line, and the data is recovered to the storage node from the ferroelectric memory.

The present invention comprises Magnetic Tunnel Junctions and Bit-Patterned Media with a warped geometry with the purpose of attaining large thermal stability factors and dramatically increasing the scalability of the magnetic bits while still allowing the reduction of switching current density and switching magnetic field, and also increasing switching speed. The warped shape allows providing thermal stability to the bits through dynamic exchange energy barrier and also by providing additional net magnetic anisotropy through shape-induced reduction of the demagnetization field. The dynamic exchange energy barrier in turn allows engineering the damping torque and the free-layer's magnetic parameters to a much larger extent than the current planar technology. It also allows much faster magnetic-field-induced switching of patterned bits than it is possible with current hard disk drive technology, through the use of precession torque instead of conventional damping torque.

The invention provides a preparation method of an avalanche photodiode diffusion structure and a diode diffusion structure. The method comprises the steps of carrying out primary dopant diffusion on an epitaxial wafer of an avalanche photodiode under the action of a first photoetching mask to obtain a central circular diffusion main junction area (1) and a diffusion trough area (2) which is a preset distance away from the diffusion main junction area; and carrying out secondary dopant diffusion under the action of a second photoetching mask to enable the depth of a central region (101) or an edge region (102) of the diffusion main junction area to be greater than that of the diffusion main junction area obtained through the primary dopant diffusion so as to obtain the avalanche photodiodediffusion structure. The method controls the uniformity of chip breakdown voltage while achieving the suppression for edge breakdown.

The invention relates to a technology for producing a magnesium oxide board through high-temperature curing. The technology comprises the following steps: 1) preparing a gelling material of the magnesium oxide board; 2) compacting the gelling material to a board blank material; 3) sending the board blank material to a high-temperature drying room for high-temperature curing; the gelling material of the magnesium oxide board comprises a reinforcing material and the gelling material, wherein the gelling material is a mixture of magnesium oxide, magnesium sulfate and water, and the magnesium sulfate is a reaction promoter of magnesium oxide. The technology has the beneficial effects that 1) magnesium sulfate is employed for substituting magnesium chloride in the prior art, low-temperature curing is possibly changed to high-temperature curing, the curing time is greatly shortened, supporting plate running time is greatly shortened, curing area is reduced, and the production efficiency is increased; 2) drying room temperature is controllable, the drying room has insulation function, under prerequisite that the maximum utilization rate of energy is increased, the magnesium oxide board is efficiently produced; and 3) a rolling roller group is employed, and the magnesium oxide board is efficiently produced.

The invention discloses a medicinal composition for preventing and treating atherosclerosis. The medicinal composition comprises tanshinone II-A and atorvastatin, wherein the weight part ratio of the tanshinone II-A to the atorvastatin is preferably 10:(2-10); the tanshinone II-A is combined with the atorvastatin as a statin drug for use, so that the curative effect of high dosage of the tanshinone II-A or the atorvastatin can be achieved by a small dosage of the combined tanshinone II-A and atorvastatin, and the synergistic effect is obvious after drug combination; thus the areas of a lipid core and plaques can be obviously reduced, macrophage infiltration is reduced, collagen content in the plaques is increased, conditions of activation of NF-kB (Nuclear Factor-kappa B) are reduced, production of active oxygen in arterial plaques is inhibited, and the like. The medicinal composition for preventing and treating atherosclerosis has broad application prospect.

The identification system cooperating with forage production comprises an embedded control platform, an ICT test unit, a relay array control module, a user customization digital simulation I/O relay isolation module and a clamp interface; a first through groove for feeding air and a second through groove for exhausting air are arranged on the rim of the back of a control cabinet body; a screen net and a draught fan are set in the first through groove for feeding air; a plurality of partition plates which are arranged at equal intervals are set in the second through groove for exhausting air; a ditch cooperating with a positioning sheet connected to the embedded control platform is arranged on the rim of the back inside the control cabinet body; a strip-shaped cavity goes through a plurality rows of metal fins tubes in a circuitous manner; and is arranged among the metal fin tubes in a fluctuation manner. The identification system realizes a fact that a suitable cooling device improves cooling efficiency of the cooling device.

The invention relates to the technical field of continuous casting machine auxiliary equipment, and discloses an adjustable intelligent cooling water manufacturing filtering device for a continuous casting machine. The filtering device comprises an adjusting assembly; the adjusting assembly comprises a cam; and the lower part of the cam is movably connected with a lifting toothed plate. Through cooperation of a cam, a lifting toothed plate, a transmission gear, a toothed rod, a movable block and a hinged inclined rod, the relative positions of filter holes in a porous adjusting plate and filter holes in a filter plate are adjusted, the filter precision is improved, and therefore heat pulsation is eliminated. The device can reduce diamond deformation and corner cracks of the casting blank and improve the casting quality. The connecting block is driven to move downwards through the self weight of the filter element, and the filter element base is fixed through the matching of the short connecting rod, the mounting plate and the clamping plate; meanwhile, the whole filter element is fixed through cooperation of the upper right-angle movable plate, the lower right-angle movable plate, the diagonal draw bar and the pressing block, so that the installation process of the filter element is simple and convenient, the repair and maintenance time of the filter device is shortened, the downtime of production equipment is shorter, and then more economic benefits can be created.

A valve guard for restricting the amount of deformation of a valve disc has a main body part abuttable with the back surface of the valve disc, and a fixation part extending to outside of a receding part. Upon mounting the valve guard to an end plate part, the fixation part is firmly attached to the outside of the receding part of the end plate part.

The invention discloses a complementary memory cell, a preparation method thereof and a complementary memory. The complementary storage unit comprises a control transistor, a pull-up diode and a pull-down diode, wherein the control transistor is used for controlling reading and writing of the storage unit; one end of the pull-up diode is connected to a positive selection line, and the other end isconnected to the source end of the control transistor for controlling high-level input; one end of the pull-down diode is connected to the negative selection line, and the other end is connected to the source end of the control transistor for controlling low-level input; wherein the pull-up diode and the pull-down diode are symmetrically arranged in the first direction. Based on the design of thecomplementary storage unit, the circuit complexity of the memory is greatly reduced, the area size of the memory is reduced, the storage density of the memory is improved, and the power consumption of the memory is also reduced under the condition that the complementary memory can realize the original functional characteristics.