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Preparation method of avalanche photodiode diffusion structure and diode diffusion structure

An avalanche photoelectric and diffusion structure technology is applied in the field of photodetectors, which can solve the problems of increased breakdown voltage deviation of external circuits, complicated testing and compensation devices, and reduced complexity and cost, so as to reduce complexity and improve sample yield. , the effect of uniformity optimization

Active Publication Date: 2019-08-06
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

Although the breakdown voltage deviation in the array can be compensated according to the test structure, this test and compensation device is complex and expensive, and it is not universal, and in imaging sensors, position sensors, etc., the impact of breakdown voltage changes is destructive
The breakdown voltage deviation in this array increases the complexity and cost of the external circuit and also degrades the performance of the avalanche photodiode array to some extent.

Method used

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  • Preparation method of avalanche photodiode diffusion structure and diode diffusion structure
  • Preparation method of avalanche photodiode diffusion structure and diode diffusion structure
  • Preparation method of avalanche photodiode diffusion structure and diode diffusion structure

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preparation example Construction

[0035] An embodiment of the present invention provides a method for preparing an avalanche photodiode diffusion structure, see figure 1 with figure 2 , The method includes: performing the first dopant diffusion on the epitaxial wafer of the avalanche photodiode under the action of the first photolithography mask to obtain the central circular diffusion main junction region 1 and the diffusion main junction Diffusion trench region 2 with a predetermined distance between the regions; under the action of the second photolithography mask, the second dopant diffusion is performed, so that the depth of the central region 101 or the edge region 102 of the diffusion main junction region is greater than that of the through The depth of the diffusion main junction region obtained by the first dopant diffusion, thereby obtaining an avalanche photodiode diffusion structure.

[0036] In the embodiment of the present invention, the first dopant diffusion and the second dopant diffusion are bot...

Embodiment 1

[0050] In this embodiment, a 32*32 avalanche photodiode array is selected from which nearly 100 points are selected for the breakdown voltage test. The avalanche photodiode includes a central circular diffusion main junction region 1, a diffusion trench region 2, and two guard ring regions 3 between the diffusion main junction region 1 and the diffusion trench region 2.

[0051] The test results are as Picture 10 As shown, it can be seen that the maximum value of the breakdown voltage in the test results does not exceed 75.1V, and the minimum value is greater than 74.3V, that is, the breakdown voltage deviation value is less than ±0.4V, and the relative voltage deviation is less than ±1%.

[0052] It is explained that the avalanche photodiode of this embodiment suppresses edge breakdown, ensures a larger breakdown voltage, and has excellent breakdown voltage uniformity.

[0053] Another embodiment of the present invention also provides an avalanche photodiode diffusion structure. T...

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Abstract

The invention provides a preparation method of an avalanche photodiode diffusion structure and a diode diffusion structure. The method comprises the steps of carrying out primary dopant diffusion on an epitaxial wafer of an avalanche photodiode under the action of a first photoetching mask to obtain a central circular diffusion main junction area (1) and a diffusion trough area (2) which is a preset distance away from the diffusion main junction area; and carrying out secondary dopant diffusion under the action of a second photoetching mask to enable the depth of a central region (101) or an edge region (102) of the diffusion main junction area to be greater than that of the diffusion main junction area obtained through the primary dopant diffusion so as to obtain the avalanche photodiodediffusion structure. The method controls the uniformity of chip breakdown voltage while achieving the suppression for edge breakdown.

Description

Technical field [0001] The invention relates to the field of photodetectors, in particular to a method for preparing an avalanche photodiode diffusion structure and a diode diffusion structure. Background technique [0002] Avalanche photodiodes made of III-V semiconductor materials are widely used in related fields such as near-infrared photodetection, such as optical fiber communication systems, near-infrared detection fields, and quantum communication single-photon detection. For an avalanche photodiode (Separate Absorption and Multiplication Avalanche Photodiode: SAM-APD) structure with separate absorption and multiplication layers, it is possible to provide electrical signal output with high fidelity (ie, low noise). On this basis, an avalanche photodiode (Separate, Absorption, Grading, Charge and Multiplication Avalanche Photodiode: SAGCM-APD) with a separate charge control layer and transition layer is added, which optimizes the electric field distribution of the device an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/107H01L31/18
CPCH01L31/0352H01L31/107H01L31/18
Inventor 王亮张博健秦金
Owner UNIV OF SCI & TECH OF CHINA
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