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X-ray photolithographic mask with through hole

A photolithography mask, X-ray technology, applied in the field of masks, can solve problems such as cracking, loss of elasticity, permanent damage, etc., to achieve the effect of improving performance, preventing deformation, and preventing damage to the mask

Inactive Publication Date: 2010-09-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] On the one hand, for hard films, cracks may occur, while for flexible films, they may be stretched to lose their elasticity, resulting in permanent damage;
[0006] On the other hand, due to the film deformation, the gap between the mask and the substrate increases, which makes the resolution of X-ray lithography worse
[0007] Existing technologies cannot solve this problem well, so the resolution potential of X-ray lithography cannot be fully exploited

Method used

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  • X-ray photolithographic mask with through hole

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] Refer below figure 1 and figure 2 , the specific embodiment of the present invention will be described in detail.

[0026] figure 1 is a cross-sectional view of an X-ray lithography mask with vias according to an embodiment of the present invention. Wherein 101 is a supporting frame of the X-ray mask according to the present invention. The frame is made of silicon, the frame is circular, the outer diameter of the frame is 50 mm, and the inner diameter of the frame is 10 mm, and the frame can be formed by etching the central area of ​​a complete silicon wafer. 102 is a thin film of the X-ray mask according to the present invention, the thin film is made of polyimide material, and the thickness of the thin film ...

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Abstract

The invention discloses an X-ray photolithographic mask with a through hole, which comprises a support frame, a layer of thin film with a through hole and a group of absorbers, wherein the support frame is provided with a smooth upper surface and used for fixing and supporting the thin film with the through hole; the thin film with the through hole is positioned on the smooth upper surface of the support frame; and the absorbers are adhered to the thin film with a through hole. By utilizing the invention, residual gas between a mask and a substrate can be effectively discharged by one or a plurality of through holes during vacuumization, thereby a smaller clearance between the mask and the substrate is maintained. Accordingly, on one hand, the mask breakage caused by gas expansion is prevented, and on the other hand, the reduction of an exposure clearance is beneficial to obtaining a more favorable exposure effect.

Description

technical field [0001] The invention relates to the technical field of microfabrication in semiconductor technology, and more specifically, relates to a mask used in X-ray lithography technology. Background technique [0002] Photolithography is an important means of manufacturing microcircuits, microstructures, microelectromechanical systems, and micro-optical devices. In photolithography technology, the resolution of photolithography is affected by the diffraction of light. Therefore, the shorter the wavelength of the light used, the smaller the effect of diffraction, and a higher resolution can be achieved. [0003] The wavelength of X-rays is much smaller than that of ultraviolet light. Therefore, the diffraction effect of light in X-ray lithography is weak and the resolution is high. In addition, X-rays also have the characteristics of strong penetrability and weak reflection. Therefore, X-ray lithography can be used for exposure of thick photoresists, and there is no ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F1/22G03F1/54G03F1/64
Inventor 谢常青马杰朱效立刘明陈宝钦叶甜春
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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