Method for preparing zinc oxide in three-dimensional nanostructure with cryogenic fluid method

Abstract

The invention relates to a method for preparing zinc oxide in a three-dimensional nanostructure with a cryogenic fluid method. The method concretely comprises the following steps of: a, carrying out hydrophilicity treatment on processed and single-side polished silicon chips; b, dissolving 0.1098g of Zn(AC)2.2H2O into 25 ml of ethanol, stirring until the Zn(AC)2.2H2O is completely dissolved, spin-coating on the polished surface of the silicon chip obtained in the step a, and drying; c, dissolving Zn(NO3)2.6H2O (0.025M) and hexamethylenetetramine (0.025M) into 250 ml of deionized water, stirring for dissolving, then adding 1.16 g of EDTA-2Na.2H2O, and stirring until the EDTA-2Na.2H2O is completely dissolved; and d, hanging and immersing the silicon chip obtained in step b with the front surface facing downwards into the solution obtained in step c, reacting for 4-6h at 80 DEG C, washing with deionized water, and drying to obtain a layer of white substance on the silicon chip, i.e. the zinc oxide in the three-dimensional nanostructure. In the invention, the zinc oxide in the three-dimensional nanostructure is prepared with the cryogenic fluid method, the whole reaction process is carried out in the open solution, thereby the high pressure condition is avoided, expensive and complex instruments and high pressure reaction kettles are unneeded, the reaction device is simple, and the process condition is environment friendly and mild.

Description

technical field [0001] The invention relates to a method for preparing nanometer zinc oxide, in particular to a method for preparing nanometer zinc oxide by adopting a low-temperature solution method. Background technique [0002] A semiconductor material is one with a resistivity of 10 -3 ~10 -8 Ωcm, a material between a metal and an insulator. Semiconductor materials are important basic materials for making transistors, integrated circuits, power electronic devices, and optoelectronic devices, and support the development of electronic information industries such as communications, computers, and network technologies. ZnO is an important direct wide bandgap semiconductor inorganic material, the band gap at room temperature is 3.37eV, and its exciton binding energy is 60meV, which is higher than GaN (25meV) and ZnSe (22meV), so ZnO is easy to operate at room temperature or higher. High-efficiency laser emission at high temperatures. At the same time, ZnO has relatively s...

AI Technical Summary

Problems solved by technology

However, the preparation of three-dimensional ZnO nanostructures by the hydrothermal method has the following disadvantages: (1) it is carried out in a closed container, and the growth process cannot be observed, which is not intuitive; High technical difficulty (strict temperature and pressure control), high cost; (3) Poor safety performance

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