Electrochemical preparation method of uniform and compact cuprous iodide semiconductor film

Abstract

The invention discloses an electrochemical preparation method of a uniform and compact cuprous iodide semiconductor film, which comprises the following steps: 1) washing ITO conductive glass or silicon wafers with acetone 2 to 3 times, cleaning the ITO conductive glass or the silicon wafers in an ultrasonic cleaning machine with deionized water, then activating the ITO conductive glass or the silicon wafers in 10% of nitric acid solution, and finally washing with deionized water repeatedly; 2) mixing 0.002-2mol / L of Cu (NO3) 2, 0.002-2mol / L of KI, 3.4 x 10<-6>-1.7 x 10<-3>mol / L of K30 polyvinylpyrrolidone, and adjusting the pH value to 1 to 5 with 2mol / L of HNO3 or 0.1mol / L of NaOH solution to obtain electrolyte; and 3) taking the ITO conductive glass or the silicon wafers as a working electrode, taking a platinum sheet electrode as a counter electrode, and taking a saturated calomel electrode as a reference electrode to obtain the compact cuprous iodide semiconductor film by eletrodeposition, wherein the eletrodeposition voltage of the relative saturated calomel electrode is 0.1-0.4V, the eletrodeposition time is 1-30 minutes, and the electrodeposition temperature is 25-80 DEG C. The invention has the advantages of simple equipment, low cost, low reaction condition requirements and the like.

Description

technical field

[0001] The invention relates to the preparation of semiconductor thin films, in particular to an electrochemical preparation method for uniform and dense cuprous iodide semiconductor thin films. Background technique

[0002] Cuprous iodide is a p-type semiconductor with a direct bandgap of 3.1eV. Due to its many unique properties (such as large energy band gap, negative spin-orbit splitting, unusually strong temperature-sensitivity and diamagnetic-like behavior), cuprous iodide is widely used in the manufacture of semiconductor devices. With the increasing application of cuprous iodide, more and more researches have been done on it.

[0003] So far, people have studied many kinds of preparation methods about cuprous iodide. Methods such as laser pulse deposition, magnetron sputtering and vacuum evaporation have been used to prepare copper iodide thin films, but these physical methods generally have disadvantages such as high reaction temperature, complicate...

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