Method for establishing copper interconnection chemical mechanically mechanical polishing process model

A chemical-mechanical and process model technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve the problems of not being able to deal with non-Gaussian distribution, ignoring the lateral random characteristics of the polishing pad surface, etc.

Active Publication Date: 2010-11-17
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But this model still has the following two defects: 1) This paper only gives the characterization method of the rough surface of the polishing pad with Gaussian distribution, and cannot handle the situation of non-Gaussian distribution
However, the surface roughness of the actual polishing pad varies g

Method used

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  • Method for establishing copper interconnection chemical mechanically mechanical polishing process model
  • Method for establishing copper interconnection chemical mechanically mechanical polishing process model
  • Method for establishing copper interconnection chemical mechanically mechanical polishing process model

Examples

Experimental program
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Effect test

Embodiment 1

[0140] Comparison between polishing results obtained by the model of the invention and actual experimental measurements

[0141] In this embodiment, the layout of the chip to be polished is a group of interconnection patterns with a line width plus line spacing of 250um and a line density varying from 10% to 90%. The standard down pressure is 28kPa, the copper removal rate is 15nm / s and the oxide removal rate is 5nm / s under the standard down pressure. The Young's modulus of the polishing pad is 29MPa, and the Poisson's coefficient is 0.2. The probability density function of the height of the sanding pad surface is assumed to be a Gaussian distribution, and the correlation function takes the following form

[0142] R ( x ) = e - x 2 η 2 - - ...

Embodiment 2

[0146] Comparison of polishing results for abrasive pads with two different surface distributions, Gaussian and non-Gaussian

[0147] In this embodiment, the layout of the chip to be polished is a pattern with a line width of 20um and a line density of 20%. The total polishing time is 100s, the standard down pressure is 28kPa, the copper removal rate under the standard down pressure is 15nm / s, the oxide removal rate is 5nm / s, the Young's modulus of the polishing pad is 29MPa, Poisson The coefficient is 0.2. where the non-Gaussian probability density function is

[0148] pdf 1 ( x ) = 2 2 π ( σ 1 + ...

Embodiment 3

[0154] In this embodiment, the chip to be polished is a pattern with a line width of 20um and a line density of 20%. The total polishing time is 500s, the standard down pressure is 28kPa, the copper removal rate under the standard down pressure is 15nm / s, the oxide removal rate is 5nm / s, the Young's modulus of the polishing pad is 29MPa, Poisson The coefficient is 0.2. The height of the sanding pad surface is assumed to have a Gaussian distribution.

[0155] Figure 11(A) shows the effect of changing the pad surface topography parameters (variance and correlation length) on dishing and erosion. Among them, dishing increases with the variance of the surface height of the polishing pad, while erosion decreases slightly with the variance, as shown in Fig. 11(B). The reason is that the variance of the surface height becomes larger, which means that the surface roughness increases, and the protrusions on the surface of the polishing pad are more likely to touch the bottom of the s...

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Abstract

The invention belongs to the field of a copper interconnection chemical mechanically mechanical polishing process, and in particular relates to a method for establishing a copper interconnection chemical mechanically mechanical polishing process model. In the method, a probability density function represents the height characteristic of the surface of a polishing pad, an autocorrelation function represents the traverse characteristic of the surface of the polishing pad, and the rough surface of the polishing pad according with the specific probability density characteristic is generated by adopting a spectral method and a nonlinear transform method. In the method, the surface of the polishing pad is not needed to be geometrically simplified and approximated, and the randomly distributed geometric characteristics of the surface of the polishing pad can be strictly represented. The contact problem of the rough surface of the polishing pad and the surface of a chip is accurately solved by utilizing a contact mechanics function, so the modeling of the whole mechanically mechanical polishing process is realized and the model can be used for detecting results of the mechanically mechanical polishing process.

Description

technical field [0001] The invention belongs to the field of semiconductor copper interconnection chemical mechanical polishing technology, and in particular relates to a method for establishing a rough polishing pad chemical mechanical polishing technology model. Background technique [0002] With the further development of integrated circuit semiconductor manufacturing technology, the feature size of integrated circuits is further reduced, and the damascene copper interconnection process is widely used in semiconductor manufacturing processes, and has become the mainstream process for multilayer wiring of integrated circuits. In the multi-layer wiring three-dimensional structure of copper interconnection, the high planarization of the chip surface is one of the key technologies. So far, chemical mechanical polishing (Chemical Mechanical Polishing, CMP) technology is the only successful and large-scale used planarization process technology. The prior art discloses a rotary...

Claims

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Application Information

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IPC IPC(8): G06F17/50H01L21/321H01L21/768
Inventor 曾璇严昌浩陶俊冯春阳
Owner FUDAN UNIV
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