Flash memory and manufacturing method thereof

Abstract

The invention provides a flash memory and a manufacturing method thereof. The manufacturing method of the flash memory includes that: a semiconductor substrate is provided, the semiconductor substrate is provided with a grid structure, the semiconductor substrates at the two sides of the grid structure are internally provided with a source electrode and a drain electrode, the semiconductor substrate is provided with an interlayer stratum medium covering the grid structure, wherein the interlayer stratum medium contains a conductive plug which penetrates the interlayer stratum medium and exposes the source electrode, or drain electrode or grid structure; a metal connection line is formed on the conductive plug and partial stratum medium; and a barrier layer is formed on the stratum medium and the metal connection line. The invention improves the programming and erasing speed of flash memory, further durability of programming / erasing cycle is improved, so that the service life of flash memory is prolonged.

Description

technical field [0001] The invention relates to a manufacturing process of a semiconductor device, in particular to a flash memory and a manufacturing method thereof. Background technique [0002] Flash memory is a type of non-volatile memory that can retain on-chip information even after the power supply is turned off; it is electrically erasable and reprogrammable in the system without requiring a special high voltage; flash memory has low cost , The characteristics of high density. [0003] Flash memory is generally designed to have a stacked gate (Stack-Gate) structure, which includes a tunnel oxide layer, a polysilicon floating gate for storing charges, silicon oxide / silicon nitride / silicon oxide ( Oxide-Nitride-Oxide, ONO) inter-gate dielectric layer and a polysilicon control gate for controlling data access. [0004] The production process of the existing flash memory is as follows: Figure 1 to Figure 4 shown. refer to figure 1 , provide a semiconductor substrat...

AI Technical Summary

Problems solved by technology

[0009] In the existing process of forming a flash memory, plasma or hydrogen ions will diffuse into the tunneling oxide layer 106 due to the deposition process, etching process, and alloy process used in the subsequent formation of the high-density plasma chemical vapor deposition layer. , resulting in reduced endurance during the program / erase cycle of the flash memory, and resulting in reduced program and erase rates, affecting the lifetime of the flash memory

Images