Method for improving resolution of single-piezoelectric layer thin film acoustic wave sensor
A thin-film bulk acoustic wave and sensor technology, which is applied in the direction of material analysis, instruments, and scientific instruments using sound waves/ultrasonic waves/infrasonic waves. High, simple processing effect
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[0020] The method for improving the resolution of a thin-film bulk acoustic wave sensor proposed by the present invention is applicable to a single piezoelectric layer thin-film bulk acoustic wave sensor. This sensor can be manufactured using silicon-based micromachining technology. The following is a typical process flow:
[0021] 1. Select a double-sided polished, moderately doped, (100) silicon wafer 1 with a resistivity of 2 to 4 Ω cm as the substrate, and thermally oxidize and deposit S on it. i o 2 Layer 2, with a thickness of about 300nm (such as figure 1 shown);
[0022] 2. Photoetching the front side once to form a photoresist pattern, evaporate a Pt electrode layer with a thickness of about 100nm on the substrate, remove the photoresist by wet method, and form a piezoelectric layer bottom electrode 3 pattern complementary to the photoresist pattern ( Such as figure 2 shown);
[0023] 3. Prepare the ZnO or AlN piezoelectric layer by sputtering, perform photolitho...
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