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MOCVD growing method of polar c-plane GaN based on c-plane SiC substrate

A growth method and polarity technology, applied in the field of microelectronics, can solve the problems of poor material quality and high stress, and achieve the effect of reducing defect density and stress.

Active Publication Date: 2012-02-08
云南凝慧电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the quality of the material grown by this method is still poor, and the stress in the material is relatively large

Method used

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  • MOCVD growing method of polar c-plane GaN based on c-plane SiC substrate
  • MOCVD growing method of polar c-plane GaN based on c-plane SiC substrate
  • MOCVD growing method of polar c-plane GaN based on c-plane SiC substrate

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1, the realization steps of the present invention are as follows:

[0020] Step 1, performing heat treatment on the substrate substrate.

[0021] Place the c-plane SiC substrate in the metal organic chemical vapor deposition MOCVD reaction chamber, and pass the mixed gas of hydrogen and ammonia into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the condition that the substrate heating temperature is 1100° C., the time is 8 minutes, and the pressure of the reaction chamber is 40 Torr, heat treatment is performed on the substrate.

[0022] Step 2, growing the first layer of TiN insertion layer.

[0023] Raise the temperature of the heat-treated substrate to 1000°C, deposit a Ti layer with a thickness of 5nm on the surface of the SiC substrate, and then maintain the pressure at 40 Torr and 1000°C in an ammonia gas environment with a flow rate of 4000 sccm Nitriding was carried out for 8 minutes to form a 5...

Embodiment 2

[0035] The realization steps of the present invention are as follows:

[0036] Step A, performing heat treatment on the base substrate.

[0037] Place the c-plane SiC substrate in the metal organic chemical vapor deposition MOCVD reaction chamber, and pass the mixed gas of hydrogen and ammonia into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the condition that the substrate heating temperature is 1100° C., the time is 8 minutes, and the pressure of the reaction chamber is 40 Torr, heat treatment is performed on the substrate.

[0038] Step B, growing a first TiN insertion layer.

[0039] Raise the temperature of the heat-treated substrate to 900°C, deposit a Ti layer with a thickness of 1nm on the surface of the SiC substrate, and then maintain the pressure at 20 Torr and 900°C in an ammonia gas environment with a flow rate of 3000 sccm Nitriding was carried out for 5 minutes to form a first TiN layer with a thickness ...

Embodiment 3

[0051] The realization steps of the present invention are as follows:

[0052] Step 1: performing heat treatment on the base substrate.

[0053] Place the polar c-plane SiC substrate in the metal organic chemical vapor deposition MOCVD reaction chamber, and pass the mixed gas of hydrogen and ammonia into the reaction chamber, and the vacuum degree in the reaction chamber is less than 2×10 -2 Torr, under the condition that the substrate heating temperature is 1200° C., the time is 10 min, and the pressure of the reaction chamber is 760 Torr, heat treatment is performed on the substrate.

[0054] Step 2, growing a first TiN insertion layer.

[0055] Raise the temperature of the heat-treated substrate to 1200°C, deposit a Ti layer with a thickness of 10nm on the GaN surface, and then in an ammonia gas environment with a flow rate of 10,000 sccm, under the conditions of maintaining a pressure of 760 Torr and 1200°C nitrogen A 10 nm thick TiN layer was formed within 10 minutes. ...

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Abstract

The invention discloses a growing method of a polar c-plane GaN film based on a c-plane SiC substrate, which mainly solves the problem of poor material quality in the conventional polar c-plane GaN material growth. The growing method comprises the following growing steps: (1) arranging a c-plane Al2O2 substrate in an MOCVD reaction chamber, and carrying out heat treatment on the substrate; (2) onthe c-plane Al2O3 substrate, growing a low-temperature unstressed AlInN layer which has the thickness of 100-300 nm and the temperature of 700 DEG C; (3) on the low-temperature unstressed AlInN layer, growing a high-temperature GaN layer which has the thickness of 1000-2000 nm and the temperature of 950-1100 DEG C; (4) growing a TiN layer of 1-10 nm on the high-temperature GaN layer; (5) on the TiN layer, growing a polar c-plane GaN layer which has the thickness of 2000-5000 nm and the temperature of 950-1100 DEG C; (6) on the polar c-plane GaN layer, growing a TiN layer which has the thickness of 1-10 nm; and (7) on the TiN layer, growing a polar c-plane GaN layer which has the thickness of 2000-5000 nm and the temperature of 950-1100 DEG C. The invention has the advantages of simple process and low defect, and can be used for manufacturing polar c-plane GaN light-emitting diodes and high electron mobility transistors.

Description

technical field [0001] The invention belongs to the field of microelectronics technology, and relates to a growth method of semiconductor materials, in particular to a metal organic compound chemical vapor deposition MOCVD growth method of a polar c-plane GaN semiconductor material on a c-plane SiC substrate, which can be used to make polar c Surface GaN-based semiconductor devices. technical background [0002] GaN-based, GaAs-based, InP-based and other semiconductor materials have large gaps in their forbidden bands, so people usually use these compound semiconductor materials to form various heterostructures. Due to the large difference in the forbidden band width of the compound semiconductor materials on both sides of the heterojunction interface in the heterojunction, these heterostructures have a common feature, that is, a quantum well is generated near the heterojunction interface. For the heterojunction composed of these compound semiconductor materials, people can...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/44C30B29/40
Inventor 郝跃许晟瑞张进成杨林安王昊陈珂曹艳荣杨传凯
Owner 云南凝慧电子科技有限公司