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Method for preparing crystalline silicon solar cell selective emitter junction

A solar cell, selective technology, applied in the direction of crystal growth, chemical instruments and methods, circuits, etc., can solve the problems of poor industrial practicability and high cost, and achieve the effect of weakening the impact of silicon wafer minority life, saving production costs, and good uniformity Effect

Active Publication Date: 2012-12-19
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this one-time diffusion process requires the use of additional laser equipment, which is costly and currently only stays in the laboratory stage, with poor industrial applicability

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A method for preparing a selective emission junction of a crystalline silicon solar cell, comprising the steps of:

[0036] First, a diffusion mask is grown on the textured surface of the crystalline silicon wafer, and then the electrode grid line area is etched and grooved; then a diffusion process is used to form a heavily doped area in the electrode grid line area, and at the same time, a lightly doped area is formed in the non-electrode grid line area. Miscellaneous region; The primary diffusion process includes the following steps:

[0037] (1) Boat entry: push the quartz boat loaded with silicon wafers into the diffusion furnace tube; the boat entry time is controlled at 6 minutes, the temperature is set at 860°C, and the nitrogen flow rate is 12L / min;

[0038] (2) Stable temperature: the temperature in the diffusion furnace tube is stabilized; the time for temperature stabilization is controlled at 10 minutes, the temperature is set at 860°C, and the nitrogen flo...

Embodiment 2

[0046] A method for preparing a selective emission junction of a crystalline silicon solar cell, comprising the steps of:

[0047] First, a diffusion mask is grown on the textured surface of the crystalline silicon wafer, and then the electrode grid line area is etched and grooved; then a diffusion process is used to form a heavily doped area in the electrode grid line area, and at the same time, a lightly doped area is formed in the non-electrode grid line area. Miscellaneous region; The primary diffusion process includes the following steps:

[0048](1) Boat entry: Push the quartz boat loaded with silicon wafers into the diffusion furnace tube; the boat entry time is controlled at 6 minutes, the temperature is set at 875°C, and the nitrogen flow rate is 12L / min;

[0049] (2) Stable temperature: the temperature in the diffusion furnace tube is stabilized; the time for temperature stabilization is controlled at 10 minutes, the temperature is set at 875°C, and the nitrogen flow...

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Abstract

The invention discloses a method for preparing a crystalline silicon solar cell selective emitter junction. The method comprises the following steps of: growing a diffusion mask on a textured surface of a crystalline silicon wafer; etching and slotting an electrode gate line region; forming a heavily doped region at the electrode gate line region by using primary diffusion technology; and forminga lightly doped region at a non-electrode gate line region; the primary diffusion technology comprises the following steps of: (1) feeding a boat; (2) stabilizing a temperature; (3) performing high temperature diffusion: carrying phosphorus oxychloride into a diffusion furnace tube through nitrogen gas for diffusing; (4) performing high temperature propulsion: introducing the oxygen to perform diffusion and then redistributing; (5) stabilizing the temperature: reducing the temperature to 20 to 120 DEG C to stabilize the temperature in the diffusion furnace tube; (6) performing low temperaturepropulsion: introducing the oxygen to perform the diffusion and then redistributing; and (7) withdrawing the boat. By the method, square resistance of the heavily doped region can be controlled below40 ohms and the square resistance of the lightly doped region can be controlled over 50 ohms so as to realize the preparation of the crystalline silicon solar cell selective emitter junction.

Description

technical field [0001] The invention relates to a method for preparing a crystalline silicon solar cell, in particular to a method for preparing a selective emission junction of a crystalline silicon solar cell. Background technique [0002] In today's world, the continuous use of conventional energy has brought about a series of economic and social problems such as energy shortage and environmental degradation, and the development of solar cells is one of the ways to solve the above problems. Therefore, all countries in the world are actively developing solar cells, and high conversion efficiency and low cost are the main trends in the development of solar cells and the goals pursued by technology researchers. [0003] At present, among all kinds of solar cells, crystalline silicon solar cells account for 90% of the market share, among which the conversion efficiency of monocrystalline silicon cells exceeds 17%, and the conversion efficiency of polycrystalline silicon cells...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C30B31/08
CPCY02P70/50
Inventor 吴坚王栩生章灵军
Owner CSI CELLS CO LTD