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Crystalline silicon solar battery and preparation method thereof

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve problems such as increasing recombination loss and reducing cell conversion efficiency

Inactive Publication Date: 2010-12-22
黄麟
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0018] In summary, if only the high-conductivity transparent conductive film is directly applied to crystalline silicon solar cells, it cannot effectively solve the problems existing in common crystalline silicon solar cells. However, sometimes it will increase the recombination loss, thereby reducing the conversion efficiency of the battery

Method used

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  • Crystalline silicon solar battery and preparation method thereof
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  • Crystalline silicon solar battery and preparation method thereof

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Embodiment 1

[0078] According to the manufacturing method of the present invention, the battery of one of the present inventions is manufactured, but before step 5, the silicon oxide film on the crystalline silicon wafer is removed. Use the same silicon material as the usual industrial production of crystalline silicon solar cells, that is, oriented p-type monocrystalline silicon wafers with a thickness of 0.2mm at the CZ level. The selected process parameters are: resistivity of p-type monocrystalline silicon wafers About 1Ωcm; p on the back + type heavily doped layer, its sheet resistance is about 3Ω / □; the front n + Type heavily doped layer, its thickness is about 40nm, and its doping concentration is about 9×10 19 / cm 3 ; The window layer is an ITO thin film made by evaporation, and the material used is 99.9999% high-purity InSn alloy (ratio: 9:1). When evaporating, the temperature of the crystal silicon wafer is heated to 300 ° C, and its square resistance is ≤ 20Ω / □, its thickne...

Embodiment 2

[0080] According to the manufacturing method of the present invention, the battery of one of the present inventions is manufactured, but before step 5, the silicon oxide film on the crystalline silicon wafer is removed. The crystal orientation n-type single crystal silicon wafer with a thickness of 0.2mm of CZ level is used, and the process parameters are selected as follows: the resistivity of the n-type single crystal silicon wafer is about 1Ωcm; + type heavily doped layer, its sheet resistance is about 1Ω / □; the front p + Type heavily doped layer, its thickness is about 40nm, and its doping concentration is about 9×10 19 / cm 3 ; The window layer is an ITO thin film made by evaporation, and the material used is 99.9999% high-purity InSn alloy (ratio: 9:1). When evaporating, the temperature of the crystal silicon wafer is heated to 300 ° C, and its square resistance is ≤ 20Ω / □, its thickness is about 150nm; the distance between the metal grid lines of the front grid-shape...

Embodiment 3

[0082] The second battery of the present invention is manufactured according to the manufacturing method of the present invention. Use the same silicon material as the usual industrial production of crystalline silicon solar cells, that is, oriented p-type monocrystalline silicon wafers with a thickness of 0.2mm at the CZ level. The selected process parameters are: resistivity of p-type monocrystalline silicon wafers About 1Ωcm; p on the back + type heavily doped layer, its sheet resistance is about 3Ω / □; the front n + Type heavily doped layer, its thickness is about 10-20nm, and its doping concentration is about 5×10 19 / cm 3 , the thickness of the impurity defect barrier layer (silicon oxide film) is about 7-15nm; the window layer is an ITO film made by sputtering, the material used is a common ITO target, and the temperature of the crystalline silicon wafer during sputtering is less than 150℃, its square resistance is about 40Ω / □, and its thickness is about 150nm; the d...

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Abstract

The invention discloses a crystalline silicon solar battery and a manufacturing method thereof, belonging to the technical field of solar batteries. The crystalline silicon solar battery comprises a front gate metal electrode, a window layer, a second conduction type heavily doped layer, a first conduction type lightly doped crystalline silicon substrate, a first conduction type heavily doped layer and a back electrode. In the invention, by arranging the 'thin' and heavily doped second conduction type heavily doped layer and the 'transparent' and 'conductive' window layer and introducing a low-temperature sintering process of the metal electrode in the manufacturing process of the battery, the composite loss, the ohmic loss and the shielding loss of the usual crystalline silicon solar battery can be reduced, thus the conversion efficiency of the crystalline silicon solar battery can be improved by at least more than 10%. Simultaneously, by additionally arranging an impurity and defect blocking layer between the window layer and the second conduction type heavily doped layer, the crystalline silicon can be prevented from being polluted by impurities and causing defects in the manufacturing process of the battery, so that the battery can be manufactured more conveniently and has lower manufacturing cost.

Description

technical field [0001] The invention relates to a solar cell, in particular to a crystalline silicon (monocrystalline silicon or polycrystalline silicon) solar cell and a preparation method thereof. Background technique [0002] Currently, common crystalline silicon solar cells 10, such as figure 1 As shown, its typical structure includes: front grid metal electrode 12, anti-reflection and passivation layer 13, n + Type heavily doped layer 14, p-type lightly doped crystalline silicon substrate 16, back electrode 17, wherein, the front gate-shaped metal electrode 12 must penetrate the anti-reflection and passivation layer 13 through a sintering process, and be connected with n + Type heavily doped layer 14 forms an ohmic contact; n + Type heavily doped layer 14 is formed on one surface of p-type lightly doped crystalline silicon substrate 16 by methods such as diffusion, ion implantation or epitaxy, and, n + Type heavily doped layer 14 and p-type lightly doped crystalline ...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/0256H01L31/0352H01L31/0232H01L31/18
CPCY02E10/50Y02P70/50
Inventor 黄麟
Owner 黄麟