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Three-dimensional microheater with arc groove heating membrane area and manufacturing method thereof

An arc-shaped groove and heating film area technology, applied in the direction of heating element materials, microstructure technology, microstructure devices, etc., to achieve the effects of increasing reliability, easy arraying and mass production, and heat concentration

Active Publication Date: 2010-12-29
HEFEI MICRO NANO SENSING TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention intends to provide a three-dimensional micro-heater with an arc-shaped heating film area manufactured by an isotropic dry etching process. The stripping process based on glue spraying photolithography solves the problem of making a heating resistance wire inside the groove

Method used

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  • Three-dimensional microheater with arc groove heating membrane area and manufacturing method thereof
  • Three-dimensional microheater with arc groove heating membrane area and manufacturing method thereof
  • Three-dimensional microheater with arc groove heating membrane area and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0036] The structure diagram of this embodiment can be found in figure 1 As shown, the specific production method is as follows:

[0037] 1. Selection of silicon substrate: choose a 4-inch silicon wafer with an N-type (110) surface as the substrate, with a resistivity of 1-10Ω·cm, and a silicon wafer thickness of 450±10 microns.

[0038] 2. Making the front etching window for forming the groove structure: a silicon oxide film with a thickness of 2.0 microns is formed on the surface of the silicon wafer by thermal oxidation. Then perform photolithography to make a window pattern, and use reactive ion etching (RIE) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0039] 3. Make a groove with a circular arc-shaped cross-section: under the protection of silicon oxide, use the method of silicon isotropic dry etching to etch a circular arc-shaped groove on the silicon wafer through the etching window formed in s...

Embodiment 2

[0046] The structure diagram of this embodiment can be found in image 3 As shown, the specific production method is as follows:

[0047] 1. Selection of silicon substrate: choose a 4-inch silicon wafer with an N-type (100) plane as the substrate, with a resistivity of 3-8Ω·cm, and a silicon wafer thickness of 350±10 microns.

[0048] 2. Making the front etching window for forming the groove structure: a silicon oxide film with a thickness of 2.0 microns is formed on the surface of the silicon wafer by means of low-pressure chemical vapor deposition (LPCVD). Then perform photolithography to make a window pattern, and use ion beam etching (Ion-beam) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0049] 3. Make a groove with a circular arc-shaped cross-section: under the protection of silicon oxide, use the method of silicon isotropic dry etching to etch a circular arc-shaped groove on the silicon wafer thr...

Embodiment 3

[0056] The structure diagram of this embodiment can be found in Figure 4 As shown, the specific production method is as follows:

[0057] 1. Selection of silicon substrate: select a 4-inch silicon wafer with a P-type (111) plane as the substrate, with a resistivity of 1-10Ω·cm, and a silicon wafer thickness of 450±10 microns.

[0058] 2. Making the front etching window for forming the groove structure: a silicon oxide film with a thickness of 1.0 micron is formed on the surface of the silicon wafer by thermal oxidation. Then perform photolithography to make a window pattern, and use ion beam etching (Ion-beam) to completely etch the exposed silicon oxide under the protection of the photoresist to form a front etching window.

[0059] 3. Make a groove with a circular arc-shaped cross-section: under the protection of silicon oxide, use the method of silicon isotropic dry etching to etch a circular arc-shaped groove on the silicon wafer through the etching window formed in step...

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Abstract

The invention relates to a three-dimensional microheater with an arc groove heating membrane area and a manufacturing method thereof. The three-dimensional microheater is characterized in that: the groove heating membrane area of which the cross section is an arc is connected with a lining frame through a support cantilever beam; a resistive heater is arranged in the groove of the heating membrane in a broken line or curve form and is connected with an electrode on the lining frame through a lead wire on the support cantilever beam; and a heat insulating cavity is positioned under the heating membrane area and the support cantilever beam. The resistive heater of the heater is arranged in the groove of the central heating membrane area with the three-dimensional structure, heat loss due to convection heat exchange is smaller and the power consumption of the heater can be effectively reduced. The arc-structure groove heating membrane area avoids corners, so the heat stress is uniformly distributed in the heating membrane area, and the mechanical strength of the heater at high temperature is improved.

Description

technical field [0001] The invention relates to a three-dimensional micro-heater with an arc-shaped groove heating film area and a manufacturing method thereof, belonging to the field of micro-electromechanical systems (MEMS). Background technique [0002] With the continuous development of micro-processing technology, micro-heaters based on MEMS technology have begun to be widely used in the fields of gas detection, environmental monitoring and infrared heat sources. Due to the continuous promotion and deepening of applications, the requirements for low power consumption, low cost, high performance and high reliability of micro heaters are also increasingly strong. How to make a heater with low power consumption and high performance has always been the goal pursued by those skilled in the art. [0003] At present, micro-heaters based on silicon substrates can be divided into two types from the supporting membrane structure, namely closed membrane type and suspended membran...

Claims

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Application Information

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IPC IPC(8): H05B3/14B81C1/00
Inventor 李铁许磊王跃林
Owner HEFEI MICRO NANO SENSING TECH CO LTD
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