Panel display driving chip based on silicon on insulator (SOI) and preparation method thereof

Abstract

The invention provides a panel display driving chip based on a silicon on insulator (SOI) material, which is composed of a high-voltage P-type transverse metal oxide transistor, a high-voltage N-type transverse metal oxide transistor, a high-voltage N-type transverse insulated gate bipolar transistor and a low-voltage device, wherein each high-voltage device is isolated by a double-groove structure filled with silicon dioxide, which starts from the oxygen buried layer and ends at the field oxide on the device surface via the N-type buried layer and the N-type epitaxial layer; and the connection region of the epitaxial layer and the oxygen buried layer is provided with the N-type buried layer. The preparation method comprises the following steps: making the oxygen buried layer, the N-type buried layer and the deposition epitaxial layer on the P-type substrate; making the high-voltage P wells of the high-voltage N-type transverse metal oxide transistor and the high-voltage N-type transverse insulated gate bipolar transistor, the P-type drift region of the high-voltage P-type transverse metal oxide transistor, the buffer layer of the high-voltage transistor, the low-voltage well of the low-voltage transistor, the source and drain regions and the contact holes; and evaporating aluminium, photoetching aluminium in a reversed mode, forming electrodes and metal field plates, and passivating.

Description

technical field [0001] The invention relates to a flat panel display drive chip and a preparation method thereof, and is especially suitable for a row address selection drive chip and a column address selection drive chip for a plasma flat panel display (PDP). Background technique [0002] On the whole, the plasma flat panel display driver chip is mainly composed of a low-voltage logic circuit controlling a high-voltage output circuit. With the continuous improvement of display technology and drive technology, plasma flat panel display driver chips have the following development trends: higher operating frequency, smaller size of high-voltage devices, lower power consumption, and better performance. This has increasingly stringent requirements on the output stage high-voltage power devices of the driver chip. At present, the lateral double-diffused metal oxide semiconductor tube is mainly used as the output high-voltage device of the commonly used plasma flat panel display ...

AI Technical Summary

Problems solved by technology

At present, the lateral double-diffused metal oxide semiconductor tube is mainly used as the output high-voltage device of the commonly used plasma flat panel display driver chip, and the lateral double-diffused metal oxide semiconductor tube is limited by its working principle, and it must occupy a large chip as a high-voltage output device. Area, and with the development of lateral insulated gate bipolar transistors, it has begun to gradually replace the application of lateral double-diffused metal oxide semiconductor transistors to achieve smaller chip areas and lower power consumption; the main isolation structures include: single slot Filling silicon dioxide and polysilicon isolation, deep junction isolation and pn junction self-isolation, however, the single-slot isolation structure requires high process conditions and insufficient reliability. The chip area is wasted by the pn junction isolation high-voltage structure, and the area of ​​the chip used for isolation exceeds 20%, with the advancement of silicon-on-insulator (SOI) technology, the use of double-groove isolation structures can not only ensure the reliability of isolation, but also effectively improve chip utilization. The isolation structure occupies less than 5% of the chip area

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