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Fractal graphene material with negative electron affinity as well as preparation method and application thereof

An affinity and graphene technology, applied in the field of fractal graphene materials, can solve the problems of poor emission uniformity and low efficiency, and achieve the effect of achieving density, overcoming low proportion, and improving low field emission capability.

Active Publication Date: 2011-02-09
CHONGQING QIYUEYONGYANG MICROELECTRONICS SCI&TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disordered arrangement of graphene nanosheets in the existing graphene film leads to low field emission efficiency and poor emission uniformity

Method used

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  • Fractal graphene material with negative electron affinity as well as preparation method and application thereof
  • Fractal graphene material with negative electron affinity as well as preparation method and application thereof
  • Fractal graphene material with negative electron affinity as well as preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0039] Such as figure 2 Shown, method of the present invention comprises the following steps:

[0040] 1) Select copper suitable for graphene growth as the substrate, and perform physical and chemical cleaning on the substrate to achieve the clean surface state required for deposition;

[0041] 2) Load the cleaned substrate into the magnetron sputtering reaction chamber 1, start the vacuum units 16 and 17, and wait until the vacuum degree reaches 8×10 -4 Pa, through the flow meter 2 into the inert gas, so that the vacuum rose to 1Pa and kept stable, start the electrode 3, the formation of plasma 4, through the plasma bombardment of the substrate 5, deposit three layers of nickel metal on the substrate as a lining end;

[0042] 3) After the deposition is completed, wait for the vacuum degree to return to 10 -3 Pa, the substrate deposited on the base material is sent into the ultra-high temperature chemical vapor deposition reaction chamber 18 by the transfer robot arm 15; t...

Embodiment 2

[0047] This embodiment includes the following steps:

[0048] 1) Select a semiconductor material (such as silicon) suitable for graphene growth as the substrate, and perform physical and chemical cleaning on the substrate to achieve the surface cleanliness required for deposition;

[0049] 2) Load the cleaned substrate into the magnetron sputtering reaction chamber 1, start the vacuum units 16 and 17, and wait until the vacuum degree reaches 8×10 -4 Pa, through the flow meter 2 into the inert gas, so that the vacuum rose to 1Pa and kept stable, start the electrode 3, the formation of plasma 4, through the plasma bombardment of the substrate 5, sequentially deposit cobalt-nickel metal on the substrate as a lining end;

[0050] 3) After the deposition is completed, wait for the vacuum degree to return to 10 -3 Pa, the substrate deposited on the base material is sent into the ultra-high temperature chemical vapor deposition reaction chamber 18 by the transfer robot arm 15; the ...

Embodiment 3

[0055] This embodiment includes the following steps:

[0056] 1) Select ceramics suitable for graphene growth as the substrate, and perform physical and chemical cleaning on the substrate to achieve the clean surface state required for deposition;

[0057] 2) Load the cleaned substrate into the magnetron sputtering reaction chamber 1, start the vacuum units 16 and 17, and wait until the vacuum degree reaches 8×10 -4 During Pa, feed inert gas through flow meter 2, make vacuum rise to 1Pa and keep stable, start electrode 3, form plasma 4, by plasma bombardment substrate 5, deposit cobalt-chromium-nickel metal successively on substrate as Substrate;

[0058] 3) After the deposition is completed, wait for the vacuum degree to return to 10 -3 Pa, the substrate deposited on the base material is sent into the ultra-high temperature chemical vapor deposition reaction chamber 18 by the transfer robot arm 15; the vacuum degree of the reaction chamber 18 reaches 5×10 -4 At Pa, start t...

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Abstract

The invention relates to a fractal graphene material with negative electron affinity as well as a preparation method and application thereof. The fractal graphene material is prepared by adopting a superhigh temperature chemical vapor deposition process and comprises monolayer fractal flake graphene and multilayer fractal flake graphene which are deposited on a substrate and vertically grow in a staggered way; along with the increase of the temperature of the substrate, the crystal state of a graphene nanosheet trends to vertical growth, which directly decides the electrical property orientation of the graphene nanosheet; and the negative electron affinity is generated due to the existence of a large-curvature strip-shaped bulging structure of the flake graphene so that the local field is enhanced, therefore, the fractal graphene material has stronger field electron emission capacity and high structure stability, is very suitable for manufacturing a cathode material of a field emission device and has wide application prospects in the fields of field emission display, cold cathode electric light sources, X-ray sources, electron beam welding and cold cathode electron source devices, and the like.

Description

technical field [0001] The invention relates to the field of novel materials, in particular to a fractal graphene material (Fractal Graphene with NEA, FGN for short) with negative electron affinity, which can be used to make a cathode of a field emission device. Background technique [0002] Graphene is a new carbonaceous material that is densely packed into a two-dimensional honeycomb lattice structure by a single layer of carbon atoms. In 2004, Geim A, a scientist at the University of Manchester in the United Kingdom, peeled off and observed the existence of a single-layer carbon atomic planar structure, that is, the existence of graphene, through micromechanical exfoliation, breaking the traditional concept of thermodynamics that a two-dimensional single-layer atomic crystal structure cannot exist alone. There is an upsurge of research on graphene materials all over the world. Due to its unique two-dimensional crystal structure, it exhibits some novel physical properties...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 李葵阳
Owner CHONGQING QIYUEYONGYANG MICROELECTRONICS SCI&TECH DEV
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