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Gallium nitride-based III-V group compound semiconductor (light-emitting diode) LED epitaxial wafer and growing method thereof

An LED epitaxial wafer, GaN-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of dead lamp life, electrostatic sensitivity, small size, etc., to improve the built-in electric field, easy to operate, and simple steps Effect

Inactive Publication Date: 2011-02-23
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] However, due to its small size, this kind of LED is very sensitive to static electricity, and is easily damaged by electrostatic discharge, so that it often encounters dead lights or short lifespan during application.

Method used

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  • Gallium nitride-based III-V group compound semiconductor (light-emitting diode) LED epitaxial wafer and growing method thereof
  • Gallium nitride-based III-V group compound semiconductor (light-emitting diode) LED epitaxial wafer and growing method thereof
  • Gallium nitride-based III-V group compound semiconductor (light-emitting diode) LED epitaxial wafer and growing method thereof

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Embodiment 1

[0058] Raw materials: high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa), TEGa is used as the gallium source, TMIn is used as the indium source, and the N-type dopant is silane (SiH 4 ), the P-type dopant is magnesium dicene (Cp 2 Mg), the substrate is (0001) plane sapphire.

[0059] Vessel: Aixtron Cruis I MOCVD reaction chamber

[0060] The specific operation steps are as follows:

[0061] 1. High temperature treatment: In the MOCVD reaction chamber, high-purity H 2 , reduce the pressure of the reaction chamber to 150mbar, heat the 0001-face sapphire 1 to 1100°C, and treat at high temperature for 5 minutes to 20 minutes;

[0062] 2. Nitriding treatment: reduce the temperature to 500°C, and use NH with a flow rate of 8 standard liters / minute 3 Pass into the reaction chamber, maintain for 120 seconds, and perform nitriding treatme...

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Abstract

The invention discloses a gallium nitride-based III-V group compound semiconductor LED epitaxial wafer, which comprises an active layer, wherein the active layer comprises one or more quantum well barriers; and each quantum well barrier comprises a well layer, a high-temperature barrier layer and a lower-temperature barrier layer in turn from top down. In the gallium nitride-based LED epitaxial wafer provided by the invention, by changing the growing method of the active layer, namely growing a high-temperature barrier layer first and then growing a low-temperature barrier layer, the barrier layers at two different temperatures are grown to reduce the stress caused in a fast cooling process to a barrier layer-well layer interface, improve a built-in electric field and consequently improvethe antistatic capacity of the epitaxial wafer. Meanwhile, the invention also provides a growing method of the gallium nitride-based III-V group compound semiconductor LED epitaxial wafer, which has the characteristics of simple steps, easy operation and remarkable effect.

Description

technical field [0001] The invention relates to the field of LEDs, in particular to a gallium nitride-based III-V group compound semiconductor LED epitaxial wafer and a growth method thereof. Background technique [0002] High-brightness light-emitting diode (LED), as a new type of high-efficiency, environmentally friendly, and green solid-state lighting source, is rapidly being widely used due to its advantages of small size, light weight, long life, high reliability, low voltage and low power consumption. be applied. [0003] GaN-based high-brightness light-emitting diodes (LEDs) are widely used in daily life, such as traffic lights, mobile phone backlights, outdoor full-color displays, urban landscape lighting, automotive interior and exterior lights, tunnel lights, etc. With the continuous improvement of the brightness of GaN-based LEDs, the application range of LEDs has gradually changed from traditional small light-emitting products to household lighting products. ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/04
Inventor 季辉梁智勇艾建军戚运东罗正加
Owner XIANGNENG HUALEI OPTOELECTRONICS
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