Power metal-oxide-semiconductor field effect transistor (MOSFET) with self-aligned embedded Schottky junction

Abstract

The invention provides a power metal-oxide-semiconductor field effect transistor (MOSFET) with a self-aligned embedded Schottky junction. The power MOSFET comprises a drain region, a drift region, a gate oxide, a gate electrode, a field oxide, channel regions, sidewall oxides, anodes and source electrodes, wherein, a drift region doped layer positioned on a base is formed on the drain region; a gate region is formed on the doped layer and comprises the gate oxide, the gate electrode and the field oxide; the sidewall oxides positioned at two sides of the gate region are formed on the doped layer; source regions positioned at two sides of the gate region are formed on the doped layer, and the source regions comprise the channel regions, the anodes and the source electrodes; and the anodes and the drift region form a Schottky contact, and the anodes are in short connection with the source electrodes. The power MOSFET provided by the invention is compatible with the conventional power MOSFET technology, thus the power MOSFET has strong feasibility and more easily meets the application requirement for a power electronic system.

Description

technical field [0001] The present invention relates to a metal oxide semiconductor field effect transistor (MOSFET), in particular to a self-aligned embedded Schottky junction power MOSFET device. Background technique [0002] Power MOSFET has the characteristics of low forward voltage drop, high switching speed, easy gate control, etc., and has become an important semiconductor device in low and medium voltage power electronic applications. Power MOSFETs are fundamental building blocks in high power semiconductor devices such as conductance modulated bipolar transistors. In some MOSFET-based circuits, including switching power supplies, adjustable speed drives, etc., excessive current flows through the parasitic PN junction diodes of the power MOSFET during the operating cycle of the device. When used as the front-end switch of a power converter, the body diode of the power MOSFET acts as a freewheeling diode, flowing half of the current during the power conversion cycle....

AI Technical Summary

Problems solved by technology

Interconnects and increased package inductance will result in reduced conversion efficiency and system stability at such high switching frequencies

Images