Microheating plate for metal oxide semiconductor nano-film gas sensor

A technology of oxide semiconductors and gas sensors, which is applied in the direction of semiconductor devices, electric solid devices, metal material coating technology, etc., can solve the problems of complicated processing steps and uneven temperature distribution, and achieve the improvement of unreasonable temperature distribution and low cost , the effect of uniform temperature distribution

Inactive Publication Date: 2011-05-25
NANJING UNIV OF TECH
View PDF6 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a metal oxide semiconductor nano-film gas sensor micro-heating plate to overcome the defects of complicated processing steps and uneven temperature distribution of the multi-layer micro-heating plate structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microheating plate for metal oxide semiconductor nano-film gas sensor
  • Microheating plate for metal oxide semiconductor nano-film gas sensor
  • Microheating plate for metal oxide semiconductor nano-film gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 1 , figure 2 As shown, the metal oxide semiconductor nano-film gas sensor of the present invention includes a silicon substrate 4, a silicon island 5, a silicon nitride cut-off layer 3, a silicon dioxide heat insulating layer 2, an interdigital signal electrode 7, a temperature measuring electrode 8, and a heating electrode 6 ; The silicon substrate 1 has a through-hole structure, which is a trapezoidal through-hole with a small top area and a large bottom area. The upper surface of the silicon substrate including the top of the through hole is provided with a silicon nitride stop layer 3, the upper surface of the silicon nitride stop layer 3 is provided with a silicon dioxide heat insulating layer 2, and the upper surface of the silicon dioxide heat insulating layer 2 is provided with an interdigital signal electrode 7. The electrode group 1 composed of the temperature measuring electrode 8 and the heating electrode 6 is provided with a silicon island ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a microheating plate for a metal oxide semiconductor nano-film gas sensor, which comprises a silicon substrate, a silicon island, a silicon nitride cut-off layer, a silicon dioxide insulation layer, an interdigital signal electrode, a temperature measuring electrode and a heating electrode, wherein the silicon substrate has a through-hole structure; the upper surface of the silicon substrate, including the top of a through hole, is provided with the silicon nitride cut-off layer of which the upper surface is provided with the silicon dioxide insulation layer; the upper surface of the silicon dioxide insulation layer is provided with an electrode group which is composed of the interdigital signal electrode, the temperature measuring electrode and the heating electrode; and the silicon island is arranged on the lower surface of the silicon nitride cut-off layer on the top of the through hole of the silicon substrate. The invention also discloses a process for manufacturing the microheating plate. As the heating electrode, the interdigital signal electrode and the temperature measuring electrode are manufactured on one layer, the manufacturing complexity is reduced and the rate of finished products is increased. As a silicon island structure is designed and manufactured on the lower part of a work area of the sensor to conduct heat generated by the heating electrode, the work area has uniform temperature distribution.

Description

technical field [0001] The present invention relates to a micro-heating plate and its manufacturing process, more specifically to a micro-heating plate for a metal oxide semiconductor gas sensor and its manufacturing process, which is mainly used for the production, storage, and transportation of toxic and harmful gases. field of security testing. Background technique [0002] Most of the reducing gases encountered in daily life are toxic and harmful gases or flammable and explosive gases, such as industrial emissions of SO 2 , NO x and H 2 S gas is the most important cause of environmental pollution; H is commonly used as fuel 2 、CH 4 And once CO leaks and encounters an open flame, an explosion accident will occur. Among them, CO is easily combined with hemoglobin to cause gas poisoning. However, the methods for detecting these gases all have the disadvantages of requiring large-scale instrument analysis, using expensive and complex monitoring systems, low sensitivity,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/00B81C1/00G01N27/14
Inventor 殷晨波张子立陶春旻朱斌董宁宁
Owner NANJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products