Microheating plate for metal oxide semiconductor nano-film gas sensor
A technology of oxide semiconductors and gas sensors, which is applied in the direction of semiconductor devices, electric solid devices, metal material coating technology, etc., can solve the problems of complicated processing steps and uneven temperature distribution, and achieve the improvement of unreasonable temperature distribution and low cost , the effect of uniform temperature distribution
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[0038] Such as figure 1 , figure 2 As shown, the metal oxide semiconductor nano-film gas sensor of the present invention includes a silicon substrate 4, a silicon island 5, a silicon nitride cut-off layer 3, a silicon dioxide heat insulating layer 2, an interdigital signal electrode 7, a temperature measuring electrode 8, and a heating electrode 6 ; The silicon substrate 1 has a through-hole structure, which is a trapezoidal through-hole with a small top area and a large bottom area. The upper surface of the silicon substrate including the top of the through hole is provided with a silicon nitride stop layer 3, the upper surface of the silicon nitride stop layer 3 is provided with a silicon dioxide heat insulating layer 2, and the upper surface of the silicon dioxide heat insulating layer 2 is provided with an interdigital signal electrode 7. The electrode group 1 composed of the temperature measuring electrode 8 and the heating electrode 6 is provided with a silicon island ...
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