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Embedded dynamic random access memory (eDRAM) cell -gain cell eDRAM cell with metal oxide semiconductor (MOS) capacitors and preparation method of gain cell eDRAM cells

A MOS process and MOS transistor technology, applied in the field of memory and preparation, embedded dynamic random access memory, gain unit eDRAM unit, can solve the problems of high refresh frequency and short data retention time, so as to reduce refresh frequency and improve data retention time , The effect of low preparation cost

Inactive Publication Date: 2011-06-01
FUDAN UNIV
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Problems solved by technology

However, such a storage capacitor composed of MOS transistor active area capacitance and gate capacitance is quite small, so its data retention time is relatively short, and the refresh frequency requirement is relatively high.

Method used

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  • Embedded dynamic random access memory (eDRAM) cell -gain cell eDRAM cell with metal oxide semiconductor (MOS) capacitors and preparation method of gain cell eDRAM cells
  • Embedded dynamic random access memory (eDRAM) cell -gain cell eDRAM cell with metal oxide semiconductor (MOS) capacitors and preparation method of gain cell eDRAM cells
  • Embedded dynamic random access memory (eDRAM) cell -gain cell eDRAM cell with metal oxide semiconductor (MOS) capacitors and preparation method of gain cell eDRAM cells

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Embodiment Construction

[0040] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0041] image 3 Shown is a schematic diagram of the circuit structure of the gain unit eDRAM unit according to the first embodiment of the present invention. Such as image 3 As shown, the gain unit eDRAM unit 400 includes a write MOS transistor 401, a read MOS transistor 402, an equivalent parasitic capacitance 404, a MOS capacitance 405, a write word line (Write Word Line, WWL) 406, a write bit line (Write Bit Line, WBL ) 407 , a read word line (Read Word Line, RWL) 408 , and a read bit line (Read Bit Line, RBL) 409 . Wherein, the gate of the write MOS transistor 401 is connected to WWL, so that the write MOS transistor 401 is controlled by WWL; the source (or drain) of the MOS transistor 401 is connected to WBL, and the drain (or source) of the MOS transistor...

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Abstract

The invention provides an embedded dynamic random access memory (eDRAM) cell-gain cell eDRAM cell with metal oxide semiconductor (MOS) capacitors and a preparation method of the gain cell eDRAM cells, belonging to the technical field of eDRAMs. The invention has the following beneficial effects: an MOS capacitor is added on the memory node of each gain cell eDRAM cell, thus lengthening the data hold time of the gain cell eDRAM cells, reducing the refresh frequency and reducing the power consumption of the eDRAM formed by the gain cell eDRAM cells; and at the same time, the added MOS capacitors can be compatible with the standard MOS process, so the preparation method has the characteristic of low preparation cost.

Description

technical field [0001] The invention belongs to the technical field of dynamic random access memory (DRAM), in particular to an embedded dynamic random access memory (eDRAM) technology, in particular to a gain cell eDRAM (GainCell eDRAM) unit with a MOS capacitor and capable of being integrated with a MOS process , memory and preparation method. Background technique [0002] Memory can be divided into off-chip memory and embedded memory. Embedded memory is a basic part of the chip that is integrated in the chip with various logic and mixed signal IP modules in the chip system. Embedded memory includes embedded static random access memory (eSRAM) and embedded dynamic random access memory (eDRAM). Among them, eDRAM has the characteristics of small cell area because its unit only includes one transistor and one capacitor, compared with the six transistors of eSRAM unit . [0003] However, the difficulty of traditional eDRAM is that the manufacture of its capacitors is general...

Claims

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Application Information

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IPC IPC(8): G11C11/401G11C11/409G11C11/4063
Inventor 林殷茵董存霖孟超程宽马亚楠严冰
Owner FUDAN UNIV
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