Organic light emitting device and preparation method thereof

A device and electroluminescence technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of difficult process operation, serious concentration quenching effect, unbalanced carrier injection, etc., and achieve simplification Device structure and fabrication process, reduction of concentration quenching effect, effect of low turn-on voltage

Inactive Publication Date: 2011-06-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned method not only has problems such as carrier injection imbalance, exciton recombination region at a narrow interface, and serious concentration quenching effect, but also has complex structures, difficult process operations, and high requirements for device preparation conditions.

Method used

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  • Organic light emitting device and preparation method thereof
  • Organic light emitting device and preparation method thereof
  • Organic light emitting device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Such as figure 1 As shown, the functional layer 3 in the device structure includes a double host material of a hole transport material and an electron transport material.

[0059] The hole transport material of the device is NPB, and the electron transport material is Alq 3 , the cathode layer is Mg:Ag alloy. The entire device structure is described as:

[0060] Glass substrate / ITO / NPB:Alq 3 (100nm) / Mg:Ag(200nm)

[0061] The preparation method is as follows:

[0062] ①Use detergent, ethanol solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. Wherein the ITO film on the glass substrate is used as the anode layer of the device, the square resistance of the ITO film is 10Ω / sq, and the film thickness is 180nm.

[0063] ② Move the dried substrate into a vacuum chamber, and pretreat the ITO glass with low-energy oxygen plasma for 10 minutes under an oxygen pressure environment ...

Embodiment 2

[0071] Such as figure 2 As shown, the functional layer 30 in the device structure includes a double host material of a hole transport material and an electron transport material, and the doped dye is a yellow phosphorescent dye.

[0072] The hole transport material of the device is TCTA, the electron transport material is Bphen, and the doping dye is (tbt) 2 Ir(acac), Mg:Ag alloy is used for the cathode layer. The entire device structure is described as:

[0073] Glass substrate / ITO / TCTA:Bphen:4%(tbt) 2 Ir(acac)(100nm) / Mg:Ag(200nm)

[0074] The preparation process of device A is similar to that of Example 1, wherein the evaporation rate of the organic material in step ③ is:

[0075] The gradient of the evaporation rate of the hole transport material decreases gradually: 1nm / s→0nm / s;

[0076] The gradient of the evaporation rate of the electron transport material is gradually increased: 0nm / s→1nm / s;

[0077] The evaporation rate of the yellow phosphorescent dye is mainta...

Embodiment 3

[0083] Such as figure 2 As shown, the functional layer 31 in the device structure includes a double host material of a hole transport material and an electron transport material, and the doped dye is a red fluorescent dye.

[0084] The hole transport material of the device is TCTA, the electron transport material is Bphen, the doping dye is DCJTB, and the cathode layer is Mg:Ag alloy. The entire device structure is described as:

[0085] Glass substrate / ITO / TCTA:Bphen:1%DCJTB(100nm) / Mg:Ag(200nm)

[0086] The preparation process of the device is similar to that of Example 1, wherein the evaporation rate of the organic material in step ③ is:

[0087] The gradient of the evaporation rate of the hole transport material decreases gradually: 1nm / s→0nm / s;

[0088] The gradient of the evaporation rate of the electron transport material is gradually increased: 0nm / s→1nm / s;

[0089] The evaporation rate of the red fluorescent dye is maintained at 0.001nm / s.

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Abstract

The invention provides an organic light emitting device and a preparation method thereof. The organic light emitting device comprises a substrate, a first electrode layer positioned on the surface of the substrate, a functional layer positioned on the first electrode layer, and a second electrode layer formed on the functional layer. The functional layer comprises at least the first two of an electron transport material, a hole transport material, a fluorescent dye and a phosphorescent dye. Deposition rates of the electron transport material and the hole transport material change in a gradient mode. By the organic light emitting device and the preparation method thereof, the stability of the device can be improved, a preparation process and a preparation flow of the device are simplified, the efficiency of the device is improved, and the service life of the device is prolonged.

Description

technical field [0001] The invention relates to the field of organic photoelectric technology in electronic components, in particular to an organic electroluminescent device and a preparation method thereof. Background technique [0002] The rapid development of science and technology makes information display devices and their technologies constantly updated. The current display technology is liquid crystal display (Liquid Crystal Display, LCD) as the mainstream, but its viewing angle, power consumption, response speed, high and low temperature characteristics However, the new display technology of organic light-emitting devices (OLEDs) can solve the above problems well, and has a series of other advantages. It is widely used in daily production and all areas of life. [0003] In 1987, C W Tang and others from Eastman Kodak Company first proposed the concept of an organic electroluminescent device based on an organic semiconductor thin film. At that time, the luminous effi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56C23C14/24C23C14/54
Inventor 于军胜赵娟张伟蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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